IXFH220N20X3 IXYS

IXFH220N20X3 electronic component of IXYS
IXFH220N20X3 IXYS
IXFH220N20X3 MOSFETs
IXFH220N20X3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFH220N20X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH220N20X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFH220N20X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
Datasheet: IXFH220N20X3 Datasheet (PDF)
Price (USD)
1: USD 22.5207 ea
Line Total: USD 22.52 
Availability : 25
  
Ship by Fri. 08 Aug to Wed. 13 Aug
QtyUnit Price
1$ 22.5207
10$ 19.3162
30$ 17.6653
90$ 16.2255

Availability 25
Ship by Fri. 08 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 22.5207
10$ 19.3162
30$ 17.6653
90$ 16.2255

   
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RoHS - XON
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We are delighted to provide the IXFH220N20X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH220N20X3 and other electronic components in the MOSFETs category and beyond.

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CorporationThe IXFH220N20X3 is a surface mount MOSFET in a TO-247AD package from IXYS Corporation. It features an ultra-low on-resistance N-Channel MOSFET with a maximum drain-source breakdown voltage of 20 V and a drain current capability of 18 A when mounted on a suitable heat sink. This part also offers very low gate charge and fast switching times to ensure high levels of efficiency, especially in high-frequency applications. Additionally, the advanced design of the IXFH220N20X3 allows it to be operated at low gate-source voltage and to dissipate heat quickly.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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