TM IXFH 24N80P V = 800 V PolarHV HiPerFET DSS IXFK 24N80P I = 24 A D25 Power MOSFET IXFT 24N80P R 400 m DS(on) N-Channel Enhancement Mode t 250 ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25C to 150C 800 V DSS J V T = 25C to 150C R = 1 M 800 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM D S D (TAB) I T = 25C24A D25 C I T = 25C, pulse width limited by T 55 A DM C JM TO-268 (IXFT) Case Style I T = 25C12A AR C E T = 25C50mJ AR C E T = 25C 1.5 J AS C G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS S D (TAB) T 150C, R = 2 J G P T = 25C 650 W D C TO-264 AA (IXFK) T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg M Mounting torque (TO-247 & TO-264) 1.13/10 Nm/lb.in. d Weight TO-247 6 g G D (TAB) TO-268 5 g S TO-264 10 g G = Gate D = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 C L S = Source Tab = Drain T Plastic body for 10 s 260 C SOLD Features Symbol Test Conditions Characteristic Values z International standard packages (T = 25C, unless otherwise specified) Min. Typ. Max. J z Fast recovery diode BV V = 0 V, I = 250 A 800 V z DSS GS D Unclamped Inductive Switching (UIS) rated V V = V , I = 4 mA 3.0 5.0 V GS(th) DS GS D z Low package inductance - easy to drive and to protect I V = 30 V, V = 0 V 100 nA GSS GS DS I V = V 25 A DSS DS DSS Advantages V = 0 V T = 125C 1000 A GS J z R V = 10 V, I = 0.5 I 400 m Easy to mount DS(on) GS D D25 z Pulse test, t 300 s, duty cycle d 2 % Space savings z High power density 2006 IXYS All rights reserved DS99572E(07/06)IXFH 24N80P IXFK 24N80P IXFT 24N80P Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 15 25 S fs DS D D25 C 7200 pF iss 1 2 3 C V = 0 V, V = 25 V, f = 1 MHz 470 pF oss GS DS C 26 pF rss t 32 ns d(on) t V = 10 V, V = 0.5 I 27 ns r GS DS D25 t R =2 (External) 75 ns d(off) G t 24 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 105 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 30 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 33 nC b 1.0 1.4 .040 .055 gd b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R 0.19 C/W 2 thJC C .4 .8 .016 .031 R TO-247 0.21 C/W thCS D 20.80 21.46 .819 .845 R TO-264 0.15 C/W E 15.75 16.26 .610 .640 thCS e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions Min. Typ. Max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 24 A S GS TO-264 (IXFK) Outline I Repetitive 55 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 250 ns rr F Q V = 100V 0.8 C RM R I 6.0 A RM TO-268 (IXFT)Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2