TM IXFH 30N60P V = 600 V PolarHV HiPerFET DSS I =30 A IXFT 30N60P D25 Power MOSFET IXFV 30N60P R 240 m DS(on) N-Channel Enhancement Mode IXFV 30N60PS t 200 ns rr Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V DSS J G V T = 25 C to 150 C R = 1 M 600 V D DGR J GS D (TAB) S V Continuous 30 V GSS PLUS220 SMD (IXFV...S) V Transient 40 V GSM I T = 25C30A D25 C I T = 25 C, pulse width limited by T 80 A DM C JM I T = 25C30A G AR C D (TAB) S E T = 25C50mJ AR C E T = 25 C 1.5 J AS C TO-247 (IXFH) dv/dt I I , di/dt 100 A/s, V V , 20 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25 C 500 W D C T -55 ... +150 C J G D (TAB) T 150 C D JM S T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L TO-268 (IXFT) T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220) 11..65/2.5..15 N/lb. C G Weight TO-247 6 g S D (TAB) TO-268 5 g PLUS220 4 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 600 V DSS GS D Features V V = V , I = 4 mA 2.5 5.0 V l GS(th) DS GS D Fast Recovery diode l Unclamped Inductive Switching (UIS) I V = 30 V, V = 0 100 nA GSS GS DS rated l I V = V 25 A DSS DS DSS International standard packages l V = 0 V T = 125 C 250 A GS J Low package inductance - easy to drive and to protect R V = 10 V, I = 0.5 I 240 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99316E(03/06) 2006 IXYS All rights reservedIXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 15 27 S fs DS D D25 C 4000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 430 pF oss GS DS C 42 pF rss t 29 ns d(on) t V = 10 V, V = 0.5 I 20 ns r GS DS D25 t R = 4 (External) 80 ns d(off) G t 25 ns f Q 82 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 28 nC gs GS DS DSS D D25 Q 28 nC gd R 0.25 C/W thJC R TO-247, PLUS220 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 30 A S GS I Repetitive 80 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 200 ns rr F Q V = 100V, V = 0 V 0.8 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2