TM TM TrenchT2 HiperFET V = 100V IXFH320N10T2 DSS I = 320A Power MOSFET IXFT320N10T2 D25 R 3.5m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings V T = 25C to 175C 100 V DSS J V T = 25C to 175C, R = 1M 100 V DGR J GS TO-268 (IXFT) V Continuous 20 V GSS V Transient 30 V GSM G I T = 25C (Chip Capability) 320 A D25 C S I Lead Current Limit, RMS 160 A LRMS D (Tab) I T = 25C, Pulse Width Limited by T 800 A DM C JM I T = 25C 160 A A C G = Gate D = Drain E T = 25C 1.5 J AS C S = Source Tab = Drain dv/dt I I , V V , T 175C 15 V/ns S DM DD DSS J Features P T = 25C 1000 W D C z International Standard Packages T -55 ... +175 C J z High Current Handling Capability T 175 C JM z Fast Intrinsic Diode T -55 ... +175 C z stg Avalanche Rated z Fast Intrinsic Diode T 1.6mm (0.062in.) from Case for 10s 300 C L z Low R DS(on) T Plastic Body for 10 seconds 260 C sold M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Advantages Weight TO-247 6 g TO-268 4 g z Easy to Mount z Space Savings z Symbol Test Conditions Characteristic Values High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 100 V DSS GS D Applications V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D z Synchronous Recification z I V = 20V, V = 0V 200 nA DC-DC Converters GSS GS DS z Battery Chargers I V = V , V = 0V 25 A z DSS DS DSS GS Switch-Mode and Resonant-Mode T = 150C 1.75 mA Power Supplies J z DC Choppers R V = 10V, I = 100A, Notes 1 & 2 3.5 m z DS(on) GS D AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications 2012 IXYS CORPORATION, All Rights Reserved DS100237A(5/12)IXFH320N10T2 IXFT320N10T2 Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 80 130 S fs DS D C 26 nF iss P C V = 0V, V = 25V, f = 1MHz 2250 pF 1 2 3 oss GS DS C 450 pF rss R Gate Input Resistance 1.48 Gi t 36 ns d(on) Resistive Switching Times t 46 ns e r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 73 ns Terminals: 1 - Gate 2 - Drain d(off) R = 1 (External) 3 - Source G t 177 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 430 nC g(on) A 4.7 5.3 .185 .209 Q V = 10V, V = 0.5 V , I = 0.5 I 110 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 1 A 2.2 2.6 .059 .098 2 Q 125 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.15 C/W thJC b 2.87 3.12 .113 .123 2 R TO-247 0.21 C/W C .4 .8 .016 .031 thCH D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Source-Drain Diode L 19.81 20.32 .780 .800 L1 4.50 .177 Symbol Test Conditions Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0V 320 A S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 1200 A SM JM TO-268 (IXFT) Outline V I = 100A, V = 0V, Note 1 1.2 V F GS SD t 98 ns rr I = 150A, V = 0V F GS I 6.6 A -di/dt = 100A/s RM V = 50V Q R 320 nC RM Terminals: 1 - Gate 2 - Drain Notes: 3 - Source 4 - Drain 1. Pulse test, t 300s, duty cycle, d 2%. 2. Includes lead resistance. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537