Q3-Class V = 500V IXFT44N50Q3 DSS TM HiperFET I = 44A IXFH44N50Q3 D25 Power MOSFET R 140m DS(on) t 250ns rr D N-Channel Enhancement Mode Avalanche Rated TO-268 G (IXFT) Fast Intrinsic Rectifier G S S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J TO-247 V T = 25 C to 150 C, R = 1M 500 V DGR J GS (IXFH) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 44 A D25 C G I T = 25 C, Pulse Width Limited by T 130 A D D (Tab) DM C JM S I T = 25 C 44 A A C E T = 25 C 1.5 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 830 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Low Intrinsic Gate Resistance International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Avalanche Rated M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. Fast Intrinsic Rectifier d Low R and Q DS(on) G Weight TO-268 4.0 g TO-247 6.0 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 500 V DSS GS D Applications V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA GSS GS DS Battery Chargers Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 125 C 1 mA J DC Choppers R V = 10V, I = 0.5 I , Note 1 140 m Temperature and Lighting Controls DS(on) GS D D25 DS100381B(12/19) 2019 IXYS CORPORATION, All Rights Reserved IXFT44N50Q3 IXFH44N50Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 17 28 S fs DS D D25 C 4800 pF iss C V = 0V, V = 25V, f = 1MHz 625 pF oss GS DS C 56 pF rss R Gate Input Resistance 0.13 Gi t 30 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 37 ns d(off) R = 2 (External) G t 9 ns f Q 93 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 34 nC gs GS DS DSS D D25 Q 44 nC gd R 0.15 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS I Repetitive, Pulse Width Limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 22A, -di/dt = 100A/ s F I 13.2 A RM V = 100V, V = 0V R GS Q 1.4 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537