TM X2-Class HiPerFET V = 650V IXFH46N65X2 DSS Power MOSFET I = 46A D25 R 69m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) V T = 25 C to 150 C 650 V DSS J G = Gate D = Drain V T = 25 C to 150 C, R = 1M 650 V DGR J GS S = Source Tab = Drain V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C46A D25 C I T = 25 C, Pulse Width Limited by T 100 A DM C JM I T = 25 C10A A C Features E T = 25 C2J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J International Standard Package Low R and Q P T = 25 C 660 W DS(ON) G D C Avalanche Rated T -55 ... +150 C Low Package Inductance J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Advantages L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Power Density M Mounting Torque 1.13 / 10 Nm/lb.in d Easy to Mount Weight 6 g Space Savings Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV V = 0V, I = 1mA 650 V DSS GS D DC-DC Converters PFC Circuits V V = V , I = 4mA 3.5 5.5 V GS(th) DS GS D AC and DC Motor Drives Robotics and Servo Controls I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 2 mA J R V = 10V, I = 0.5 I , Note 1 69 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100678C(03/16) IXFH46N65X2 Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max D J A A B 0P O 0K M D B M+ E A2 A2 A2 A2 g V = 10V, I = 0.5 I , Note 1 17 28 S fs DS D D25 Q S D2 R + + R Gate Input Resistance 0.9 Gi D1 D 0P1 4 C 4570 pF iss 1 2 3 ixys option L1 C V = 0V, V = 25V, f = 1MHz 2740 pF oss GS DS C E1 C 2.2 pF L rss Effective Output Capacitance A1 b C 165 pF c b2 o(er) Energy related V = 0V b4 GS PINS: 1 - Gate e C 650 pF V = 0.8 V o(tr) Time related DS DSS O J M C A M+ 2, 4 - Drain 3 - Source t 25 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns d(off) R = 3 (External) G t 12 ns f Q 98 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 31 nC gs GS DS DSS D D25 Q 26 nC gd R 0.19 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 46 A S GS I Repetitive, pulse Width Limited by T 184 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 180 ns rr I = 23A, -di/dt = 100A/ s F Q 1.5 C RM V = 100V R I 16.5 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537