IXFH52N50P2 IXYS

IXFH52N50P2 electronic component of IXYS
IXFH52N50P2 IXYS
IXFH52N50P2 MOSFETs
IXFH52N50P2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFH52N50P2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH52N50P2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFH52N50P2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET PolarP2 Power MOSFET
Datasheet: IXFH52N50P2 Datasheet (PDF)
Price (USD)
1: USD 10.5774 ea
Line Total: USD 10.58 
Availability - 58
  
Ship by Wed. 06 Aug to Mon. 11 Aug
QtyUnit Price
1$ 10.5774
10$ 6.1406
30$ 5.53
100$ 5.0201

Availability 58
Ship by Wed. 06 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.5774
10$ 6.1406
30$ 5.53
100$ 5.0201


Availability 547
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 13.008
10$ 9.746
120$ 8.338
510$ 7.942
1020$ 7.898


Availability 276
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 16.002
2$ 12.054
3$ 12.04
5$ 11.382
510$ 10.948

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Transistor Type
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXFH52N50P2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH52N50P2 and other electronic components in the MOSFETs category and beyond.

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TM TM Polar2 HiperFET V = 500V IXFH52N50P2 DSS I = 52A Power MOSFET IXFT52N50P2 D25 R 120m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V TO-268 (IXFT) DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V G GSS V Transient 40 V GSM S I T = 25C 52 A D25 C D (Tab) I T = 25C, Pulse Width Limited by T 150 A DM C JM I T = 25C52 A G = Gate D = Drain A C S = Source Tab = Drain E T = 25C 1.5 J AS C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25C 960 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C z stg International Standard Packages z Fast Intrinsic Diode T 1.6mm (0.062in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10 seconds 260 C sold z Low R and Q DS(ON) G M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. z Low Package Inductance d Weight TO-247 6 g TO-268 4 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D z V V = V , I = 4mA 2.5 4.5 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS z DC-DC Converters z Laser Drivers I V = V , V = 0V 15 A DSS DS DSS GS z AC and DC Motor Drives T = 125C 1.5 mA J z Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 120 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS100256A(9/11)IXFH52N50P2 IXFT52N50P2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 30 48 S fs DS D D25 C 6800 pF iss P C V = 0V, V = 25V, f = 1MHz 695 pF 1 2 3 oss GS DS C 76 pF rss t 22 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) e R = 1 (External) G t 8 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 113 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 43 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.13 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C Unless Otherwise Specified) Min. Typ. Max. P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 I V = 0V 52 A R 4.32 5.49 .170 .216 S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 208 A SM JM TO-268 Outline V I = I , V = 0V, Note 1 1.3 V SD F S GS t 250 ns rr I = 26A, -di/dt = 100A/s F I 14 A RM V = 85V, V = 0V R GS Q 1.27 C RM Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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