TM TM Polar HiPerFET V = 300V IXFH69N30P DSS Power MOSFET I = 69A IXFT69N30P D25 R 49m DS(on) t 200ns rr N-Channel Enhancement Mode TO-247 (IXFH) Avalanche Rated Fast Intrinsic Diode G D D (Tab) Symbol Test Conditions Maximum Ratings S V T = 25C to 150C 300 V DSS J V T = 25C to 150C, R = 1M 300 V DGR J GS V Continuous 20 V GSS TO-268 (IXFT) V Transient 30 V GSM I T = 25C 69 A D25 C G I T = 25C, Pulse Width Limited by T 200 A DM C JM S I T = 25C 69 A A C D (Tab) E T = 25C 1.5 J AS C dV/dt I I , V V , T 150C 20 V/ns S DM DD DSS J G = Gate D = Drain P T = 25C 500 W S = Source Tab = Drain D C T -55 to +150 C J T +150 C JM Features T -55 to +150 C stg z International Standard Packages T 1.6mm (0.063in) from Case for 10s 300 C L z Fast Intrinsic Diode T Plastic Body for 10s 260 C z SOLD Avalanche Rated z M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Low R and Q d DS(ON) G z Low Package Inductance Weight TO-247 6 g TO-268 4 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z DC-DC Coverters BV V = 0V, I = 250A 300 V DSS GS D z Battery Chargers V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D z Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA Power Supplies GSS GS DS z DC Choppers I V = V , V = 0V 25 A DSS DS DSS GS z AC and DC Motor Drives T = 125C 250 A J z Uninterrupted Power Supplies R V = 10V, I = 0.5 I , Note 1 49 m z DS(on) GS D D25 High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS99220F(10/09) IXFH69N30P IXFT69N30P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 30 48 S fs DS D D25 C 4960 pF iss C V = 0V, V = 25V, f = 1MHz 760 pF P oss GS DS 1 2 3 C 190 pF rss t 25 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 69A GS DS DSS D t 75 ns d(off) R = 4 (External) G t 27 ns e f Terminals: 1 - Gate 2 - Drain Q 156 nC g(on) 3 - Source Tab - Drain Q V = 10V, V = 0.5 V , I = 34.5A 32 nC gs GS DS DSS D Dim. Millimeter Inches Q 79 nC Min. Max. Min. Max. gd A 4.7 5.3 .185 .209 R 0.25 C/W thJC A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R TO-247 0.21 C/W 2 thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode L1 4.50 .177 P 3.55 3.65 .140 .144 Symbol Test Conditions Characteristic Values Q 5.89 6.40 0.232 0.252 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0V 69 A S GS I Repetitive, Pulse Width Limited by T 270 A TO-268 (IXFT) Outline SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 100 200 ns rr I = 25A, -di/dt = 100A/s, F V = 100V, V = 0V R GS Q 500 nC RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537