The IXFH6N120 MOSFET is a high-voltage, low On-resistance MOSFET for use in high-power switching applications. This Transistor features an ultra-low Rds(on) of 2.4 milliohms, high-current capability of up to 6 Amps, and an operating voltage of up to 1200V. Its silicon (Si)-based MOSFET technology allows it to offer superior performance compared to other transistors. It has a low leakage current, fast switching time and superior ESD performance. It is used in a variety of high-power switching applications such as DC-DC converters, motor drives, solar inverters, motor drives circuits, welding machines, industrial lighting systems, and more.