Advance Technical Information TM HiperFET V = 200V IXFT70N20Q3 DSS Power MOSFETs I = 70A IXFH70N20Q3 D25 Q3-Class R 40m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 200 V DSS J TO-247 (IXFH) V T = 25C to 150C, R = 1M 200 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 70 A D25 C G I T = 25C, Pulse Width Limited by T 210 A D D (Tab) DM C JM S I T = 25C70 A A C E T = 25C 1.5 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25C 690 W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg z Low Intrinsic Gate Resistance T 1.6mm (0.062in.) from Case for 10s 300 C z L International Standard Packages T Plastic Body for 10 seconds 260 C z sold Low Package Inductance z Fast Intrinsic Rectifier M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d z Low R and Q DS(on) G Weight TO-268 4.0 g TO-247 6.0 g Advantages z High Power Density z Easy to Mount z Symbol Test Conditions Characteristic Values Space Savings (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 200 V DSS GS D Applications V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D z DC-DC Converters z I V = 20V, V = 0V 100 nA Battery Chargers GSS GS DS z Switch-Mode and Resonant-Mode I V = V , V = 0V 10 A DSS DS DSS GS Power Supplies T = 125C 500 A z J DC Choppers z Temperature and Lighting Controls R V = 10V, I = 0.5 I , Note 1 40 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS100337(05/11) IXFT70N20Q3 IXFH70N20Q3 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 20 32 S fs DS D D25 C 3150 pF iss C V = 0V, V = 25V, f = 1MHz 815 pF oss GS DS C 100 pF rss R Gate Input Resistance 0.17 Gi t 17 ns d(on) Resistive Switching Times t 10 ns r Terminals: 1 - Gate 2,4 - Drain V = 10V, V = 0.5 V , I = 0.5 I 3 - Source GS DS DSS D D25 t 24 ns d(off) R = 2 (External) t 9 ns G f Q 67 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 21 nC gs GS DS DSS D D25 Q 34 nC gd R 0.18 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 70 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T 280 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS P t 250 ns 1 2 3 rr I = 35A, -di/dt = 100A/s F I 10.8 A RM V = 100V, V = 0V R GS Q 670 nC RM e Terminals: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t 300s, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 ADVANCE TECHNICAL INFORMATION 2 C .4 .8 .016 .031 The product presented herein is under development. The Technical Specifications offered are derived D 20.80 21.46 .819 .845 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a E 15.75 16.26 .610 .640considered reflectio of the anticipated result. IXYS reserves the right to change limits, test e 5.20 5.72 0.205 0.225 conditions, and dimensions without notice. L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537