TM TM Trench HiperFET V = 300V IXFH86N30T DSS Power MOSFET I = 86A IXFT86N30T D25 R 46m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 300 V D D (Tab) DSS J S V T = 25 C to 150 C, R = 1M 300 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM TO-268 (IXFT) I T = 25C 86 A D25 C I T = 25 C, Pulse Width Limited by T 190 A DM C JM G I T = 25C 43 A A C S E 1.5 J AS D (Tab) P T = 25 C 860 W D C dV/dt I I , V V , T 150C 20 V/ns S DM DD DSS J G = Gate D = Drain T -55 to +150 C J S = Source Tab = Drain T +150 C JM T -55 to +150 C stg Features T 1.6mm (0.063in) from Case for 10s 300 C L T Plastic Body for 10s 260 C International Standard Packages SOLD Avalanche Rated M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d High Current Handling Capability Weight TO-247 6.0 g Fast Intrinsic Rectifier TO-268 4.0 g Low R DS(on) Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 300 V High Power Density DSS GS D V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS Battery Chargers T = 125C 1 mA J Switch-Mode and Resonant-Mode R V = 10V, I = 0.5 I , Note 1 46 m DS(on) GS D D25 Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching 2014 IXYS CORPORATION, All Rights Reserved DS100208A(03/14)IXFH86N30T IXFT86N30T Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 60 100 S fs DS D D25 C 9200 pF iss C V = 0V, V = 25V, f = 1MHz 726 pF P oss GS DS 1 2 3 C 22 pF rss t 22 ns d(on) Resistive Switching Times t 12 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 3.3 (External) G t 19 ns e f Terminals: 1 - Gate 2 - Drain Q 143 nC g(on) 3 - Source Q V = 10V, V = 0.5 V , I = 0.5 I 53 nC gs GS DS DSS D D25 Dim. Millimeter Inches Q 29 nC Min. Max. Min. Max. gd A 4.7 5.3 .185 .209 R 0.145 C/W thJC A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R TO-247 0.21 C/W 2 thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Source-Drain Diode L 19.81 20.32 .780 .800 L1 4.50 .177 Symbol Test Conditions Characteristic Values P 3.55 3.65 .140 .144 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Q 5.89 6.40 0.232 0.252 J R 4.32 5.49 .170 .216 I V = 0V 86 A S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 344 A SM JM TO-268 (IXFT) Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS t 150 ns rr I = 43A, -di/dt = 100A/ s, F I 9.80 A RM V = 100V, V = 0V R GS Q 0.65 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537