Q3-Class V = 1000V IXFK24N100Q3 DSS TM HiperFET I = 24A IXFX24N100Q3 D25 Power MOSFET R 440m DS(on) D t 300ns rr N-Channel Enhancement Mode G Avalanche Rated TO-264 (IXFK) Fast Intrinsic Rectifier S G D Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1000 V Tab DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS PLUS247 V Transient 40 V GSM (IXFX) I T = 25 C 24 A D25 C I T = 25 C, Pulse Width Limited by T 60 A DM C JM I T = 25 C 24 A A C G D Tab S E T = 25 C 2 J AS C dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25 C 1000 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L Low Intrinsic Gate Resistance T Plastic Body for 10s 260 C SOLD Low Package Inductance M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. Fast Intrinsic Rectifier d Low R and Q F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. DS(on) G C Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = 0V, I = 1mA 1000 V DSS GS D DC-DC Converters Battery Chargers V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS DC Choppers I V = V , V = 0V 25 A DSS DS DSS GS Temperature and Lighting Controls T = 125 C 1.5 mA J R V = 10V, I = 0.5 I , Note 1 440 m DS(on) GS D D25 2020 IXYS CORPORATION, All Rights Reserved DS100393A(1/20) IXFK24N100Q3 IXFX24N100Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 14 24 S fs DS D D25 C 7200 pF iss C V = 0V, V = 25V, f = 1MHz 590 pF oss GS DS C 50 pF rss R Gate Input Resistance 0.18 Gi t 38 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 45 ns d(off) R = 1 (External) G t 14 ns f Q 140 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 47 nC gs GS DS DSS D D25 Q 60 nC gd R 0.125 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 24 A S GS I Repetitive, Pulse Width Limited by T 96 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 12A, -di/dt = 100A/ s F Q 1.9 C RM V = 100V, V = 0V I R GS 12.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537