Preliminary Technical Information TM X3-Class HiPerFET V = 200V IXFK300N20X3 DSS Power MOSFET I = 300A IXFX300N20X3 D25 R 4m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 200 V G DSS J D V T = 25 C to 150 C, R = 1M 200 V Tab DGR J GS S V Continuous 20 V GSS PLUS247 (IXFX) V Transient 30 V GSM I T = 25 C (Chip Capability) 300 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 700 A DM C JM G D I T = 25 C 150 A Tab A C S E T = 25 C 3.5 J AS C dv/dt I I , V V , T 150C 20 V/ns G = Gate D = Drain S DM DD DSS J S = Source Tab = Drain P T = 25 C 1250 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in International Standard Packages d Low R and Q F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb DS(ON) G C Avalanche Rated Weight TO-264 10 g Low Package Inductance PLUS247 6 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 3mA 200 V DSS GS D Space Savings V V = V , I = 8mA 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 1.5 mA J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 4 m PFC Circuits DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2017 IXYS CORPORATION, All Rights Reserved DS100844B(9/17) IXFK300N20X3 IXFX300N20X3 Symbol Test Conditions Characteristic Values TO-264 Outline E A (T = 25C, Unless Otherwise Specified) Min. Typ. Max J Q S g V = 10V, I = 60A, Note 1 80 135 S fs DS D R Q1 D R Gate Input Resistance 1.8 Gi R1 1 2 3 L1 C 23.8 nF iss C V = 0V, V = 25V, f = 1MHz 4.0 nF oss GS DS L C 3.2 pF rss c b A1 b1 b2 Effective Output Capacitance e x2 C 1640 pF o(er) Energy related V = 0V GS 0P C 5640 pF 4 V = 0.8 V o(tr) Terminals: 1 = Gate Time related DS DSS 2,4 = Drain 3 = Source t 44 ns d(on) Resistive Switching Times t 43 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 184 ns d(off) R = 1 (External) G t 13 ns f Q 375 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 117 nC gs GS DS DSS D D25 Q 94 nC gd R 0.10 C/W thJC R 0.15 C/W thCS Source-Drain Diode TM PLUS 247 Outline A E1 E Q A2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max D2 J R D1 I V = 0V 300 A D S GS 4 1 2 3 I Repetitive, pulse Width Limited by T 1200 A SM JM L1 V I = 100A, V = 0V, Note 1 1.4 V SD F GS L t 172 ns rr I = 150A, -di/dt = 100A/ s F A1 b e Q 1.1 C 3 PLCS RM C b2 2 PLCS 2 PLCS V = 100V b4 R I 12.8 A RM Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537