TM IXFK 32N80P V = 800 V PolarHV HiPerFET DSS IXFX 32N80P I = 32 A D25 Power MOSFET R 270 m DS(on) N-Channel Enhancement Mode t 250 ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) V T = 25 C to 150 C 800 V DSS J V T = 25 C to 150 C R = 1 M 800 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25C32A S D25 C I T = 25 C, pulse width limited by T 70 A DM C JM (TAB) I T = 25C16A AR C E T = 25C50mJ AR C PLUS247 (IXFX) E T = 25 C 2.0 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25 C 830 W D C T -55 ... +150 C J T 150 C JM (TAB) T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C G = Gate D = Drain L T Plastic body for 10 s 260 C S = Source Tab = Drain SOLD M Mounting torque (TO-264) 1.13/10 Nm/lb.in. d Weight TO-264 10 g PLUS247 6 g Features l International standard packages Symbol Test Conditions Characteristic Values l Fast recovery diode (T = 25 C, unless otherwise specified) Min. Typ. Max. l J Unclamped Inductive Switching (UIS) rated BV V = 0 V, I = 250 A 800 V DSS GS D l Low package inductance V V = V , I = 8 mA 3.0 5.0 V - easy to drive and to protect GS(th) DS GS D I V = 30 V , V = 0 200 nA GSS GS DC DS Advantages I V = V 25 A DSS DS DSS V = 0 V T = 125 C 1000 A l GS J Easy to mount l Space savings R V = 10 V, I = 0.5 I 270 m DS(on) GS D D25 l High power density Pulse test, t 300 s, duty cycle d 2 % DS99425E(01/06) 2006 IXYS All rights reserved IXFK 32N80P IXFX 32N80P TM PLUS 247 Outline Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 23 38 S fs DS D D25 C 8800 pF iss C V = 0 V, V = 25 V, f = 1 MHz 700 pF oss GS DS C 26 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I =0.5 I 24 ns r GS DS DSS D D25 Terminals: 1 - Gate t R = 2 (External) 85 ns 2 - Drain (Collector) d(off) G 3 - Source (Emitter) t 24 ns 4 - Drain (Collector) f Dim. Millimeter Inches Q 150 nC g(on) Min. Max. Min. Max. A 4.83 5.21 .190 .205 Q V = 10 V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 A 2.29 2.54 .090 .100 1 Q 44 nC A 1.91 2.16 .075 .085 2 gd b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 R 0.15 C/W 1 thJC b 2.92 3.12 .115 .123 2 R 0.15 C/W thCS C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 3.81 4.32 .150 .170 (T = 25 C unless otherwise specified) J Q 5.59 6.20 .220 0.244 Symbol Test Conditions Min. Typ. Max. R 4.32 4.83 .170 .190 I V = 0 V 32 A TO-264 Outline S GS I Repetitive 70 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 250 ns rr F Q V = 100V, V = 0 V 0.8 C RM R GS I 6.0 A RM Millimeter Inches Dim. Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2