Q3-Class V = 500V IXFK64N50Q3 DSS TM HiperFET I = 64A IXFX64N50Q3 D25 Power MOSFET R 85m DS(on) D t 250ns rr N-Channel Enhancement Mode G Avalanche Rated TO-264 S Fast Intrinsic Rectifier (IXFK) G D Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 500 V Tab DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V GSS PLUS247 V Transient 40 V GSM (IXFX) I T = 25 C 64 A D25 C I T = 25 C, Pulse Width Limited by T 160 A DM C JM I T = 25 C 64 A A C G D Tab E T = 25 C 4 J S AS C dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25 C 1000 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Low Intrinsic Gate Resistance F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Low Package Inductance C Fast Intrinsic Rectifier Weight TO-264 10 g Low R and Q PLUS247 6 g DS(on) G Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 1mA 500 V DSS GS D Applications V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D I V = 30V, V = 0V 200 nA DC-DC Converters GSS GS DS Battery Chargers I V = V , V = 0V 50 A DSS DS DSS GS Switch-Mode and Resonant-Mode T = 125 C 2 mA J Power Supplies DC Choppers R V = 10V, I = 0.5 I , Note 1 85 m DS(on) GS D D25 Temperature and Lighting Controls 2019 IXYS CORPORATION, All Rights Reserved DS100346A(12/19) IXFK64N50Q3 IXFX64N50Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 25 42 S fs DS D D25 C 6950 pF iss C V = 0V, V = 25V, f = 1MHz 937 pF oss GS DS C 93 pF rss R Gate Input Resistance 0.13 Gi t 36 ns d(on) Resistive Switching Times t 11 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) R = 1 (External) G t 9 ns f Q 145 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 67 nC gd R 0.125 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 64 A S GS I Repetitive, Pulse Width Limited by T 256 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 32A, -di/dt = 100A/ s F Q 1.54 C RM V = 100V, V = 0V I R GS 14 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537