Preliminary Technical Information TM X-Class HiPerFET V = 850V IXFK66N85X DSS Power MOSFET I = 66A IXFX66N85X D25 R 65m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 850 V D DSS J Tab V T = 25 C to 150 C, R = 1M 850 V S DGR J GS V Continuous 30 V PLUS247 (IXFX) GSS V Transient 40 V GSM I T = 25 C 66 A D25 C I T = 25 C, Pulse Width Limited by T 140 A DM C JM I T = 25 C33A A C G D E T = 25 C 2.5 J AS C Tab S P T = 25 C 1250 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-264) 1.13/10 Nm/lb.in Low Q d G Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 850 V DSS GS D Applications V V = V , I = 8mA 3.5 5.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS PFC Circuits T = 125C 3 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 65 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100714A(12/16)IXFK66N85X IXFX66N85X Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max E A J Q g V = 10V, I = 0.5 I , Note 1 25 42 S S fs DS D D25 R Q1 R Gate Input Resistance 0.75 D Gi R1 1 2 3 C 8900 pF L1 iss C V = 0V, V = 25V, f = 1MHz 8900 pF oss GS DS L C 142 pF rss c b A1 b1 Effective Output Capacitance b2 e x2 C 294 pF o(er) Energy related V = 0V GS C 1270 pF V = 0.8 V o(tr) 0P Time related 4 DS DSS Terminals: 1 = Gate BACK SIDE 2,4 = Drain 3 = Source t 40 ns d(on) Resistive Switching Times t 48 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 105 ns d(off) R = 1 (External) G t 20 ns f Q 230 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 53 nC gs GS DS DSS D D25 Q 113 nC gd R 0.10C/W thJC R 0.15C/W thCS TM PLUS 247 Outline Source-Drain Diode A E E1 A2 Q Symbol Test Conditions Characteristic Values D2 R (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J D1 D I V = 0V 66 A 4 S GS 1 2 3 I Repetitive, Pulse Width Limited by T 264 A L1 SM JM V I = I , V = 0V, Note 1 1.4 V L SD F S GS t 250 ns rr I = 33A, -di/dt = 100A/ s F b A1 e Q 2.7 C 3 PLCS RM C b2 2 PLCS 2 PLCS V = 100V, V = 0V b4 R GS I 21.7 A RM Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537