TM TM Polar HiPerFET V = 500V IXFL100N50P DSS Power MOSFET I = 68A D25 R 52m DS(on) (Electrically Isolated Tab) t 200ns rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J G V T = 25 C to 150 C, R = 1M 500 V DGR J GS D Isolated Tab S V Continuous 30 V GSS V Transient 40 V GSM G = Gate D = Drain I T = 25 C 68 A D25 C S = Source I T = 25 C, Pulse Width Limited by T 250 A DM C JM I T = 25 C 100 A A C E T = 25 C5J AS C dv/dt I I , V V , T 150 C 20 V/ns S DM DD DSS J Features P T = 25 C 625 W D C T -55 ... +150 C J T 150 C Silicon Chip on Direct-Copper-Bond JM T -55 ... +150 C Substrate stg - High Power Dissipation T Maximum Lead Temperature for Soldering 300 C L - Isolated Mounting Surface T Plastic Body for 10s 260 C SOLD - 2500V~ Electrical Isolation Avalanche Rated F Mounting Force 40..120 / 9..27 N/lb. C Low Package Inductance V 50/60 Hz, RMS t = 1 min 2500 V~ Fast Intrinsic Rectifier ISOL I 1 mA t = 1 s 3000 V~ Low R and Q ISOL DS(on) G Weight 8g Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values AApplications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 500 V DC-DC Converters DSS GS D Battery Chargers V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 30V, V = 0V 200 nA GSS GS DS AC Motor Control I V = V , V = 0V 25 A High Speed Power Switching DSS DS DSS GS T = 125C 2 mA Appliccation J R V = 10V, I = 50A, Note 1 52 m DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS99563F(8/17) IXFL100N50P Symbol Test Conditions Characteristic Values ISOPLUS264 (IXFL) OUTLINE (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 50A, Note 1 50 80 S fs DS D C 20 nF iss C V = 0V, V = 25V, f = 1MHz 1700 pF oss GS DS C 140 pF rss t 36 ns d(on) Resistive Switching Times t 29 ns r V = 10V, V = 0.5 V , I = 50A GS DS DSS D t 110 ns d(off) R = 1 (External) G t 26 ns 1 = Gate f 2,4 = Drain Q 240 nC 3 = Source g(on) Q V = 10V, V = 0.5 V , I = 50A 96 nC gs GS DS DSS D Q 78 nC gd R 0.20 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 100 A S GS I Repetitive, Pulse Width Limited by T 250 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 200 ns rr I = 25A, -di/dt = 100A/ s F Q 0.6 C RM V = 100V, V = 0V R GS I 6.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537