Preliminary Technical Information TM TrenchT2 HiperFET V = 150V IXFA110N15T2 DSS I = 110A Power MOSFET IXFP110N15T2 D25 R 13m DS(on) N-Channel Enhancement Mode TO-263 Avalanche Rated (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 V T = 25 C to 175 C 150 V DSS J (IXFP) V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G D S I T = 25 C 110 A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 300 A DM C JM G = Gate D = Drain I T = 25 C50 A A C S = Source Tab = Drain E T = 25 C 800 mJ AS C dV/dt I I , V V ,T 175 C 15 V/ns S DM DD DSS J P T = 25 C 480 W D C Features T -55 ... +175 C J T 175 C International standard packages JM T -55 ... +175 C 175C Operating Temperature stg High current handling capability T Maximum Lead Temperature for Soldering 300 C L Fast intrinsic Rectifier T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Dynamic dV/dt rated F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb Low R C DS(on) M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g Advantages TO-220 3.0 g Easy to mount Space savings Symbol Test Conditions Characteristic Values High power density (T = 25 C unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 250 A 150 V Applications DSS GS D V V = V , I = 250 A 2.5 4.5 V GS(th) DS GS D DC-DC converters I V = 20V, V = 0V 200 nA Battery chargers GSS GS DS Switched-mode and resonant-mode I V = V , V = 0V 5 A DSS DS DSS GS power supplies T = 150C 150A J DC choppers R V = 10V, I = 0.5 I , Notes 1, 2 11 13 m AC motor drives DS(on) GS D D25 Uninterruptible power supplies High speed power switching applications 2018 IXYS CORPORATION, All rights reserved DS100093A(11/18) IXFA110N15T2 IXFP110N15T2 Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C, unless otherwise specified) Min. Typ. Max. E E1 J C2 L1 g V = 10V, I = 55A, Note 1 75 115 S D1 fs DS D D 4 L2 H A1 1 2 3 C 8600 pF iss b b2 C V = 0V, V = 25V, f = 1MHz 685 pF L3 oss GS DS e e c 0.43 11.0 0 C 77 pF rss 0.34 8.7 t 33 ns 0.66 16.6 d(on) A2 Resistive Switching Times t 16 ns 1 - Gate 0.20 5.0 0.12 3.0 r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 2,4 - Drain t 33 ns 3 - Source R = 3.3 (External) 0.10 2.5 0.06 1.6 d(off) G t 18 ns f Q 150 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 42 nC gs GS DS DSS D D25 Q 46 nC gd R 0.31C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J I V = 0V 110 A S GS I Repetitive, Pulse width limited by T 440 A TO-220 Outline SM JM E A oP A1 V I = 100A, V = 0V, Note 1 1.3 V F GS SD H1 Q t 85 ns rr I = 55A, V = 0V F GS D2 D I 6.8 A -di/dt = 100A/ s RM D1 V = 75V Q R 290 nC RM E1 A2 EJECTOR PIN L1 L ee c 3X b Notes: 1. Pulse test, t 300 s duty cycle, d 2%. e1e1 3X b2 2. On through-hole packages, R Kelvin test contact 1 - Gate DS(on) 2,4 - Drain location must be 5mm or less from the package body. 3 - Source PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537