TM V = 500V Polar Power MOSFET IXFA12N50P DSS TM I = 12A HiperFET IXFP12N50P D25 R 500m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS G V Continuous 30 V GSS S V Transient 40 V (TAB) GSM I T = 25C12A D25 C TO-220 (IXFP) I T = 25C, pulse width limited by T 30 A DM C JM I T = 25C12A A C E T = 25C 600 mJ AS C dV/dt I I , V V , T 150C 20 V/ns S DM DD DSS J G (TAB) D S P T = 25C 200 W D C T -55 ... +150 C J T 150 C G = Gate D = Drain JM T -55 ... +150 C S = Source TAB = Drain stg T 1.6mm (0.062) from case for 10s 300 C L Features T Plastic body for 10s 260 C SOLD M Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. z d International standard packages z Unclamped Inductive Switching Weight TO-263 2.5 g TO-220 3.0 g (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions Characteristic Values z High power density (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 250A 500 V DSS GS D V V = V , I = 1mA 3.0 5.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V 5 A DSS DS DSS V = 0V T = 125C 250 A GS J R V = 10V, I = 0.5 I , Note 1 500 m DS(on) GS D D25 2008 IXYS CORPORATION, All rights reserved DS99436F(04/08) IXFA12N50P IXFP12N50P Symbol Test Conditions Characteristic Values TO-220 (IXFP) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 7.5 13 S fs DS D D25 C 1830 pF iss C V = 0V, V = 25V, f = 1MHz 182 pF oss GS DS C 16 pF rss t Resistive Switching Times 22 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 27 ns r GS DS DSS D D25 t R = 50 (External) 65 ns d(off) G t 20 ns f Q 29 nC g(on) Pins: 1 - Gate 2 - Drain Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 10 nC gd R 0.62 C/W thJC R (TO-220) 0.50 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0V 12 A S GS I Repetitive, pulse width limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns TO-263 (IXFA) Outline rr I = 6A, -di/dt = 150A/s, F Q 2.8 C RM V = 100V, V = 0V R GS I 18.2 A RM Note 1: Pulse test, t 300 s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537