X3-Class V = 600V IXFP36N60X3 DSS TM HiPerFET I = 36A D25 Power MOSFET R 90m DS(on) D G N-Channel Enhancement Mode TO-220 Avalanche Rated (IXFP) S G D S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V G = Gate D = Drain DSS J S = Source Tab = Drain V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 36 A D25 C I T = 25 C, Pulse Width Limited by T 48 A DM C JM Features I T = 25 C 8 A A C E T = 25 C 750 mJ AS C International Standard Package Low R and Q dv/dt I I , V V , T 150C 50 V/ns DS(ON) G S DM DD DSS J Avalanche Rated P T = 25 C 446 W Low Package Inductance D C T -55 ... +150 C J T 150 C Advantages JM T -55 ... +150 C stg High Power Density T Maximum Lead Temperature for Soldering 300 C L Easy to Mount 1.6 mm (0.062 in.) from Case for 10s Space Savings M Mounting Torque 1.13 / 10 Nm/lb.in d Weight 3 g Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Symbol Test Conditions Characteristic Values PFC Circuits (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. AC and DC Motor Drives J Robotics and Servo Controls BV V = 0V, I = 1mA 600 V DSS GS D V V = V , I = 2.5mA 3.5 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125 C 1 mA J R V = 10V, I = 0.5 I , Note 1 90 m DS(on) GS D D25 2021 Littelfuse, Inc. DS101027B(04/21) IXFP36N60X3 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 16 26 S fs DS D D25 R Gate Input Resistance 2.1 Gi C 2030 pF iss C V = 0V, V = 25V, f = 1MHz 3050 pF oss GS DS C 3.6 pF rss Effective Output Capacitance C 110 pF o(er) Energy related V = 0V GS C 510 pF V = 0.8 V o(tr) Time related DS DSS t 23 ns d(on) Resistive Switching Times t 8 ns r V = 10V, V = 0.5 V , I = 0.5 I t GS DS DSS D D25 45 ns d(off) R = 10 (External) t G 4 ns f Q 29 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 10 nC gs GS DS DSS D D25 Q 10 nC gd R 0.28 C/W thJC R 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 36 A S GS I Repetitive, Pulse Width Limited by T 144 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 180 ns rr I = 18A, -di/dt = 100A/s F Q 1.6 C RM V = 100V R I 18.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537