Preliminary Technical Information X-Class HiPERFET V = 850V IXFY4N85X DSS Power MOSFET I = 3.5A IXFA4N85X D25 R 2.5 DS(on) IXFP4N85X N-Channel Enhancement Mode TO-252 (IXFY) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 850 V DSS J TO-263 (IXFA) V T = 25 C to 150 C, R = 1M 850 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C 3.5 A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 10.0 A DM C JM TO-220 (IXFP) I T = 25 C2A A C E T = 25 C 125 mJ AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G P T = 25 C 150 W D C D S T -55 ... +150 C D (Tab) J T 150 C G = Gate D = Drain JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d International Standard Packages Low R and Q Weight TO-252 0.35 g DS(ON) G Avalanche Rated TO-263 2.50 g Low Package Inductance TO-220 3.00 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 850 V DSS GS D Space Savings V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 500 A J DC-DC Converters R V = 10V, I = 2A, Note 1 2.5 PFC Circuits DS(on) GS D AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100768A(06/18)IXFY4N85X IXFA4N85X IXFP4N85X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 2A, Note 1 1.2 2.0 S fs DS D R Gate Input Resistance 3 Gi C 247 pF iss C V = 0V, V = 25V, f = 1MHz 305 pF oss GS DS C 5 pF rss Effective Output Capacitance C 27 pF o(er) Energy related V = 0V GS C 60 pF V = 0.8 V o(tr) Time related DS DSS t 13 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 2A GS DS DSS D t 28 ns d(off) R = 30 (External) G t 20 ns f Q 7.0 nC g(on) Q V = 10V, V = 0.5 V , I = 2A 2.3 nC gs GS DS DSS D Q 3.3 nC gd R 0.83 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 4 A S GS I Repetitive, pulse Width Limited by T 16 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 170 ns rr I = 2A, -di/dt = 100A/ s F Q 770 nC RM V = 100V R I 9 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537