TM TM Polar HiPerFET V = 1200V IXFA6N120P DSS Power MOSFET I = 6A IXFP6N120P D25 R 2.75 DS(on) IXFH6N120P N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) V T = 25 C to 150 C 1200 V DSS J V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D D (Tab) S I T = 25 C6A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 18 A DM C JM I T = 25 C3A A C E T = 25 C 300 mJ AS C dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J G D P T = 25 C 250 W D C S D (Tab) T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Packages SOLD Dynamic dv/dt Rating F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Avalanche Rated M Mounting Torque (TO-247 & TO-220) 1.13 / 10 Nm/lb.in d Fast Intrinsic Diode Weight TO-263 2.5 g Low Q & R G DS(on) TO-220 3.0 g Low Drain-to-Tab Capacitance TO-247 6.0 g Low Package Inductance Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250 A 1200 V DSS GS D V V = V , I = 1mA 2.5 5.0 V GS(th) DS GS D DC-DC Converters Battery Chargers I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 10 A DSS DS DSS GS Power Supplies T = 125C 1 mA J Uninterrupted Power Supplies AC Motor Drives R V = 10V, I = 0.5 I , Note 1 2.75 DS(on) GS D D25 High Speed Power Switching Applications 2015 IXYS CORPORATION, All Rights Reserved DS100202C(0515)IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 3.0 5.0 S fs DS D D25 R Gate Input Resistance 1.8 Gi C 2830 pF iss C V = 0V, V = 25V, f = 1MHz 150 pF oss GS DS C 30 pF rss t 24 ns d(on) Resistive Switching Times t 11 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 3 (External) G t 14 ns f Pins: 1 - Gate 2 - Drain Q 92 nC g(on) 3 - Source Q V = 10V, V = 0.5 V , I = 0.5 I 15 nC gs GS DS DSS D D25 Q 50 nC gd R 0.50 C/W thJC R TO-220 0.50 C/W thCS R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J TO-247 Outline I V = 0V 6 A S GS I Repetitive, Pulse Width Limited by T 24 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns I = 3A, V = 0V rr F GS I 7.8 A -di/dt = 100A/ s RM V = 100V Q R 1.1 C RM Note 1: Pulse test, t 300s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 3 - Source TO-263 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 1. Gate L3 1.27 1.78 .050 .070 2,4. Drain L4 0 0.13 0 .005 3. Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537