IXFP7N80P IXYS

IXFP7N80P electronic component of IXYS
IXFP7N80P IXYS
IXFP7N80P MOSFETs
IXFP7N80P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFP7N80P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFP7N80P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFP7N80P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 7 Amps 800V 1.44 Rds
Datasheet: IXFP7N80P Datasheet (PDF)
Price (USD)
1: USD 3.766 ea
Line Total: USD 3.77 
Availability - 28
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 3.766
8$ 2.66
20$ 2.52

Availability 91
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.0125
10$ 2.875
100$ 2.728
500$ 2.585


Availability 28
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.766
8$ 2.66
20$ 2.52

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXFP7N80P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFP7N80P and other electronic components in the MOSFETs category and beyond.

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TM TM Polar HiPerFET V = 800V IXFA7N80P DSS Power MOSFET I = 7A IXFP7N80P D25 R 1.44 DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated TO-263 Fast Intrinsic Rectifier (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 800 V DSS J TO-220 V T = 25 C to 150 C, R = 1M 800 V DGR J GS (IXFP) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C7 A G D25 C D S I T = 25 C, Pulse Width Limited by T 18 A DM C JM D (Tab) I T = 25 C4 A A C G = Gate D = Drain E T = 25 C 300 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 200 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C International Standard Packages stg Dynamic dv/dt Rating T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Rectifier F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Low Q G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g TO-220 3.0 g Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 800 V Applications DSS GS D V V = V , I = 1mA 3.0 5.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Battery Chargers GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 125C 500A Uninterrupted Power Supplies J AC Motor Drives R V = 10V, I = 0.5 I , Notes 1, 2 1.44 DS(on) GS D D25 High Speed Power Switching Applications 2018 IXYS CORPORATION, All Rights Reserved DS99597G(11/18)IXFA7N80P IXFP7N80P Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 L1 g V = 20V, I = 0.5 I , Note 1 5.0 9.5 S D1 fs DS D D25 D 4 L2 H A1 1 2 3 C 1800 pF iss b b2 C V = 0V, V = 25V, f = 1MHz 128 pF L3 oss GS DS e e c 0.43 11.0 0 C 9.5 pF rss 0.34 8.7 t 28 ns 0.66 16.6 d(on) A2 Resistive Switching Times t 32 ns 1 - Gate 0.20 5.0 0.12 3.0 r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 2,4 - Drain t 55 ns 3 - Source R = 10 (External) 0.10 2.5 0.06 1.6 d(off) G t 24 ns f Q 32 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 9 nC gd R 0.62C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 7 A S GS I Repetitive, Pulse Width Limited by T 28 A TO-220 Outline SM JM E A oP A1 V I = I , V = 0V, Note 1 1.5 V F S GS SD H1 Q t 250 ns rr I = 7A, V = 0V F GS D2 D I 3 A -di/dt = 100A/ s RM D1 V = 100V Q R 300 nC RM E1 A2 EJECTOR PIN L1 L ee c 3X b e1e1 3X b2 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 2. On through-hole packages, R Kelvin test contact DS(on) 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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