TM TM Polar HiPerFET V = 800V IXFA7N80P DSS Power MOSFET I = 7A IXFP7N80P D25 R 1.44 DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated TO-263 Fast Intrinsic Rectifier (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 800 V DSS J TO-220 V T = 25 C to 150 C, R = 1M 800 V DGR J GS (IXFP) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C7 A G D25 C D S I T = 25 C, Pulse Width Limited by T 18 A DM C JM D (Tab) I T = 25 C4 A A C G = Gate D = Drain E T = 25 C 300 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 200 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C International Standard Packages stg Dynamic dv/dt Rating T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Rectifier F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Low Q G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g TO-220 3.0 g Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 800 V Applications DSS GS D V V = V , I = 1mA 3.0 5.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Battery Chargers GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 125C 500A Uninterrupted Power Supplies J AC Motor Drives R V = 10V, I = 0.5 I , Notes 1, 2 1.44 DS(on) GS D D25 High Speed Power Switching Applications 2018 IXYS CORPORATION, All Rights Reserved DS99597G(11/18)IXFA7N80P IXFP7N80P Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 L1 g V = 20V, I = 0.5 I , Note 1 5.0 9.5 S D1 fs DS D D25 D 4 L2 H A1 1 2 3 C 1800 pF iss b b2 C V = 0V, V = 25V, f = 1MHz 128 pF L3 oss GS DS e e c 0.43 11.0 0 C 9.5 pF rss 0.34 8.7 t 28 ns 0.66 16.6 d(on) A2 Resistive Switching Times t 32 ns 1 - Gate 0.20 5.0 0.12 3.0 r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 2,4 - Drain t 55 ns 3 - Source R = 10 (External) 0.10 2.5 0.06 1.6 d(off) G t 24 ns f Q 32 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 9 nC gd R 0.62C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 7 A S GS I Repetitive, Pulse Width Limited by T 28 A TO-220 Outline SM JM E A oP A1 V I = I , V = 0V, Note 1 1.5 V F S GS SD H1 Q t 250 ns rr I = 7A, V = 0V F GS D2 D I 3 A -di/dt = 100A/ s RM D1 V = 100V Q R 300 nC RM E1 A2 EJECTOR PIN L1 L ee c 3X b e1e1 3X b2 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 2. On through-hole packages, R Kelvin test contact DS(on) 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537