TM X3-Class HiPerFET V = 200V IXFP90N20X3 DSS Power MOSFET I = 90A IXFQ90N20X3 D25 R 12.8m DS(on) IXFH90N20X3 N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXFP) G D D (Tab) S TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 200 V DSS J G V T = 25 C to 150 C, R = 1M 200 V DGR J GS D S V Continuous 20 V GSS D (Tab) V Transient 30 V GSM TO-247 (IXFH) I T = 25 C90A D25 C I T = 25 C, Pulse Width Limited by T 220 A DM C JM I T = 25 C45A A C E T = 25 C 1.5 J G AS C D D (Tab) S dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C 390 W D C S = Source Tab = Drain -55 ... +150 C T J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque 1.13 / 10 Nm/lb.in d Low R and Q DS(ON) G Weight TO-220 3.0 g Avalanche Rated TO-3P 5.5 g Low Package Inductance TO-247 6.0 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 200 V DSS GS D V V = V , I = 1.5mA 2.5 4.5 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 20V, V = 0V 100 nA DC-DC Converters GSS GS DS PFC Circuits I V = V , V = 0V 5 A DSS DS DSS GS AC and DC Motor Drives T = 125C 300 A J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 10.5 12.8 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100802D(4/18)IXFP90N20X3 IXFQ90N20X3 IXFH90N20X3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 40 67 S fs DS D D25 R Gate Input Resistance 1.4 Gi C 5420 pF iss C V = 0V, V = 25V, f = 1MHz 930 pF oss GS DS C 4 pF rss Effective Output Capacitance C 420 pF o(er) Energy related V = 0V GS C 1300 pF V = 0.8 V o(tr) Time related DS DSS t 22 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 5 (External) G t 13 ns f Q 78 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 22 nC gd R 0.32 C/W thJC R TO-220 0.50 C/W thCS TO-247 & TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 90 A S GS I Repetitive, pulse Width Limited by T 360 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 95 ns rr I = 45A, -di/dt = 100A/ s F Q 360 nC RM V = 100V R I 7.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537