TM V = 200 V IXFR 140N20P PolarHT HiPerFET DSS I = 90 A D25 Power MOSFET R 22 m TM DS(on) ISOPLUS247 t 200 ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) V T = 25 C to 175 C 200 V E153432 DSS J V T = 25 C to 175 C R = 1 M 200 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM G I T = 25C90A D (Isolated Tab) D25 C S I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 280 A DM C JM G = Gate D = Drain I T = 25C60A AR C S = Source E T = 25 C 100 mJ AR C E T = 25C4J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25 C 300 W D C T -55 ... +175 C J Features T 175 C JM T -55 ... +150 C l stg International standard isolated package T 1.6 mm (0.062 in.) from case for 10 s 300 C L l UL recognized package V 50/60 Hz, RMS, 1 minute 2500 V~ l ISOL Unclamped Inductive Switching (UIS) rated M Terminal torque 1.13/10 Nm/lb.in. d l Mounting torque 1.13/10 Nm/lb.in. Low package inductance - easy to drive and to protect Weight 5g l Fast intrinsic diode Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J Advantages BV V = 0 V, I = 250 A 200 V DSS GS D l Easy to mount V V = V , I = 4 mA 2.5 5.0 V l GS(th) DS GS D Space savings l High power density I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150 C 250 A GS J R V = 10 V, I = 0.5 I 22 m DS(on) GS D D25 V = 15 V, I = 140A 17 m GS D Pulse test, t 300 s, duty cycle d 2 % DS99298E(12/05) 2006 IXYS All rights reserved IXFR 140N20P Symbol Test Conditions Characteristic Values ISOPLUS 247 OUTLINE (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 50 84 S fs DS D D25 C 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1800 pF oss GS DS C 280 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 35 ns r GS DS DSS D t R = 3.3 (External) 150 ns d(off) G t 90 ns f Q 240 nC g(on) 1 Gate, 2 Drain (Collector) Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 3 Source (Emitter) 4 no connection Q 100 nC gd R 0.5 C/W Dim. Millimeter Inches thJC Min. Max. Min. Max. R ISOPLUS247 0.15 C/W thCS A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 Source-Drain Diode Characteristic Values b 2.92 3.12 .115 .123 2 (T = 25 C, unless otherwise specified) J C 0.61 0.80 .024 .031 Symbol Test Conditions Min. typ. Max. D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 I V = 0 V 90 A S GS e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 I Repetitive 280 A L1 3.81 4.32 .150 .170 SM Q 5.59 6.20 .220 .244 V I = I , V = 0 V, 1.5 V R 4.32 4.83 .170 .190 SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 200 ns rr F Q V = 100 V, V = 0 V 0.6 C RM R GS I 6 RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2