Q3-Class V = 1000V IXFR15N100Q3 DSS TM HiperFET I = 10A D25 Power MOSFET R 1.2 DS(on) D t 250ns rr (Electrically Isolated Tab) G N-Channel Enhancement Mode S Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS V Continuous 30 V G GSS Isolated Tab D V Transient 40 V GSM S I T = 25 C 10 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 45 A DM C JM S = Source I T = 25 C 7.5 A A C E T = 25 C 1.0 J AS C dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J Features P T = 25 C 400 W D C T -55 ... +150 C J Silicon Chip on Direct-Copper Bond T 150 C JM (DCB) Substrate T -55 ... +150 C stg Isolated Mounting Surface Low Intrinsic Gate Resistance T Maximum Lead Temperature for Soldering 300 C L 2500V~ Electrical Isolation T Plastic Body for 10s 260 C SOLD Fast Intrinsic Rectifier V 50/60 Hz, 1 Minute 2500 V ISOL Avalanche Rated Low Package Inductance F Mounting Force 20..120/4.5..27 N/lb. C Weight 5 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 1000 V DSS GS D DC-DC Converters V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D Battery Chargers I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS DC Choppers T = 125 C 1.5 mA Temperature and Lighting Controls J R V = 10V, I = 7.5A, Note 1 1.2 DS(on) GS D DS100354A(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFR15N100Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 7.5A, Note 1 7.5 12.5 S fs DS D C 3250 pF iss C V = 0V, V = 25V, f = 1MHz 265 pF oss GS DS C 24 pF rss R Gate Input Resistance 0.20 Gi t 28 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 7.5A GS DS DSS D t 30 ns d(off) R = 2 (External) G t 8 ns f Q 64 nC g(on) Q V = 10V, V = 0.5 V , I = 7.5A 23 nC gs GS DS DSS D Q 27 nC gd R 0.31 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 15 A S GS I Repetitive, Pulse Width Limited by T 60 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 7.5A, -di/dt = 100A/ s F I 7.6 A RM V = 100V, V = 0V R GS Q 660 nC RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537