TM HiperFET V = 800V IXFR32N80Q3 DSS Power MOSFET I = 24A D25 Q3-Class R 300m DS(on) t 300ns (Electrically Isolated Tab) rr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 800 V DSS J V T = 25 C to 150 C, R = 1M 800 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM Isolated Tab D S I T = 25 C 24 A D25 C I T = 25 C, Pulse Width Limited by T 80 A DM C JM G = Gate D = Drain I T = 25 C 32 A A C S = Source E T = 25 C3J AS C dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J P T = 25 C 500 W D C Features T -55 ... +150 C J T 150 C JM Silicon Chip on Direct-Copper Bond T -55 ... +150 C stg (DCB) Substrate Isolated Mounting Surface T Maximum Lead Temperature for Soldering 300 C L Low Intrinsic Gate Resistance T Plastic Body for 10s 260 C SOLD 2500V~ Electrical Isolation V 50/60 Hz, 1 Minute 2500 V ISOL Fast Intrinsic Rectifier Avalanche Rated F Mounting Force 20..120/4.5..27 N/lb C Low Package Inductance Weight 5 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 800 V DSS GS D DC-DC Converters V V = V , I = 4mA 3.0 6.0 V GS(th) DS GS D Battery Chargers Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies I V = 0.8 V , V = 0V 50 A DSS DS DSS GS DC Choppers T = 125C 2 mA Temperature and Lighting Controls J R V = 10V, I = 16A, Note 1 300 m DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100362B(01/14) IXFR32N80Q3 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXFR) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 16A, Note 1 16 26 S fs DS D C 6940 pF iss C V = 0V, V = 25V, f = 1MHz 700 pF oss GS DS C 63 pF rss R Gate Input Resistance 0.16 Gi t 38 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 16A b A1 GS DS DSS D E t 45 ns c b1 b2 d(off) R = 1 (External) G t 10 ns 1 = Gate f 2,4 = Drain Q 140 nC g(on) 3 = Source Q V = 10V, V = 0.5 V , I = 16A 48 nC gs GS DS DSS D Q 63 nC gd R 0.25 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 32 A S GS I Repetitive, Pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 16A, -di/dt = 100A/ s F Q 1.4 C RM V = 100V, V = 0V R GS I 12.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537