IXFT180N20X3HV IXYS

IXFT180N20X3HV electronic component of IXYS
IXFT180N20X3HV IXYS
IXFT180N20X3HV MOSFETs
IXFT180N20X3HV  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFT180N20X3HV MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFT180N20X3HV MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFT180N20X3HV
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet: IXFT180N20X3HV Datasheet (PDF)
Price (USD)
1: USD 19.81 ea
Line Total: USD 19.81 
Availability - 24
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 19.81
2$ 17.416
4$ 16.464
10$ 15.904
30$ 15.834

Availability 24
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 19.81
2$ 17.416
4$ 16.464
10$ 15.904
30$ 15.834

   
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RoHS - XON
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We are delighted to provide the IXFT180N20X3HV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFT180N20X3HV and other electronic components in the MOSFETs category and beyond.

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InternationalThe IXFT180N20X3HV is a MOSFET DiscMSFT NChUltrJnctn X3Class, manufactured by IXYS International. It is a vertical, insulated-gate bipolar transistor (IGBT) which is supplied in a TO-268AA surface-mountable package. This IGBT has a Collector-Emitter voltage (Vce) of 600 volts, a nominal Gate-Emitter voltage (Vge) of 20 volts, and provides maximum junction temperature (Tj) of 150°C. This part is suitable for applications such as motor control, AC/DC and DC/DC converters, and other high voltage/high frequency switching applications. In addition, the IXFT180N20X3HV has an optimized anode-cathode body diode with an enhanced Figure of Merit (FOM).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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