Product Information

IXFT80N65X2HV

Name: IXFT80N65X2HV
Brand: IXYS
SKU: IXFT80N65X2HV_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

IXFT80N65X2HV electronic component of IXYS

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Datasheet

MOSFET 650V/80A TO-268HV

Manufacturer: IXYS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 22.3621 ea
Line Total: USD 22.36

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 30 Multiples : 30 IXFT80N65X2HV IXYS	30 : USD 14.694 60 : USD 13.6056 120 : USD 13.6056 150 : USD 13.6056 450 : USD 13.6056

0 - WHS 2 Ships to you between Thu. 16 May to Mon. 20 May MOQ : 1 Multiples : 1 IXFT80N65X2HV IXYS	1 : USD 16.311 10 : USD 14.9957 30 : USD 14.3743 120 : USD 12.6553

0 - WHS 3 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 1 Multiples : 1 IXFT80N65X2HV IXYS	1 : USD 22.1857 2 : USD 15.0075 3 : USD 14.1934

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Additional Infomation About Product

The IXFT80N65X2HV is a MOSFET from IXYS Corporation. It is a high-speed, high-voltage N-channel power MOSFET that is designed for use in automotive, industrial, and consumer applications. It is a high-voltage device with a drain-source breakdown voltage (BVDSS) rating of 800V and a gate-source breakdown voltage (BVGS) of ±20V. This MOSFET also features a low gate charge (Qg) and low gate input capacitance (Ciss), making it suitable for high-speed switching applications. Its on-state resistance (RDS(on)) is typically 0.80 ohms.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IXYS may also be referenced as

CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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Manufacturer IXYS IXYS
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 80 A 80 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 38 mOhms 38 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3.5 V 3.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 890 W 890 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 268HV - 3 TO - 268HV - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 140 nC 140 nC
Channel Mode Enhancement Enhancement
Tradename Hiperfet Hiperfet
Configuration Single Single
Series 650V Ultra Junction X2 650V Ultra Junction X2
Transistor Type 1 N - Channel 1 N - Channel
Brand Ixys Ixys
Forward Transconductance - Min 33 S 33 S
Fall Time 11 ns 11 ns
Product Type Mosfet Mosfet
Rise Time 24 ns 24 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 70 ns 70 ns
Typical Turn-On Delay Time 32 ns 32 ns