TM PolarHT HiPerFET IXFH 96N20P V = 200 V DSS IXFT 96N20P I =96 A Power MOSFET D25 IXFV 96N20P R 24 m DS(on) t 200 ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 200 V DSS J V T = 25 C to 150 C R = 1 M 200 V DGR J GS V Continuous 20 V GS G V Transient 30 V GSM D (TAB) S I T = 25C96A D25 C I External lead current limit 75 A D(RMS) TO-268 (IXFT) I T = 25 C, pulse width limited by T 225 A DM C JM I T = 25C60A AR C E T = 25C50mJ AR C G E T = 25 C 1.5 J S AS C D (TAB) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G PLUS220 (IXFV) P T = 25 C 600 W D C T -55 ... +175 C J T 175 C JM T -55 ... +150 C stg G D D (TAB) T 1.6 mm (0.062 in.) from case for 10 s 300 C S L T Plastic body for 10s 260 C SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d G = Gate D = Drain S = Source TAB = Drain Weight TO-220 4 g TO-247 6 g TO-268 5 g Features Symbol Test Conditions Characteristic Values l Fast Intrinsic Diode (T = 25 C, unless otherwise specified) Min. Typ. Max. l J International standard packages l Unclamped Inductive Switching (UIS) BV V = 0 V, I = 250 A 200 V DSS GS D rated l V V = V , I = 4 mA 2.5 5.0 V Low package inductance GS(th) DS GS D - easy to drive and to protect I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS Advantages V = 0 V T = 150 C 250 A GS J l Easy to mount R V = 10 V, I = 0.5 I 24 m DS(on) GS D D25 l Space savings Pulse test, t 300 s, duty cycle d 2 % l High power density DS99222E(02/06) 2006 IXYS All rights reservedIXFH 96N20P IXFT 96N20P IXFV 96N20P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 52 S fs DS D D25 C 4800 pF iss 1 2 3 C V = 0 V, V = 25 V, f = 1 MHz 1020 pF oss GS DS C 270 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I = I 30 ns r GS DS DSS D D25 t R = 4 (External) 75 ns d(off) G Terminals: 1 - Gate 2 - Drain 3 - Source TAB - Drain t 30 ns f Dim. Millimeter Inches Q 145 nC g(on) Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q V = 10 V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 A 2.2 2.54 .087 .102 1 Q 80 nC A 2.2 2.6 .059 .098 gd 2 b 1.0 1.4 .040 .055 R 0.25 C/W b 1.65 2.13 .065 .084 thJC 1 b 2.87 3.12 .113 .123 2 R (TO-247) 0.21 C/W thCS C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Source-Drain Diode Characteristic Values L 19.81 20.32 .780 .800 (T = 25 C, unless otherwise specified) J L1 4.50 .177 Symbol Test Conditions Min. Typ. Max. P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0 V 96 A S GS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I Repetitive 240 A SM TO-268 (IXFT) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A 120 200 ns rr F Q -di/dt = 100 A/s 0.7 C RM I V = 100 V, V = 0 V 7 A RM R GS PLUS220 (IXFV) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2