TM TM Polar3 HiPerFET V = 300V IXFK120N30P3 DSS Power MOSFET I = 120A IXFX120N30P3 D25 R 27m DS(on) D t 250ns rr N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode TO-264 (IXFK) S G D S Symbol Test Conditions Maximum Ratings Tab V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C, R = 1M 300 V DGR J GS PLUS247 V Continuous 20 V GSS (IXFX) V Transient 30 V GSM I T = 25 C 120 A D25 C I T = 25 C, Pulse Width Limited by T 300 A DM C JM G I T = 25 C 60 A A C D Tab S E T = 25 C 3 J AS C P T = 25 C 1130 W D C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Dynamic dv/dt Rating Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Diode T Plastic Body for 10s 260 C SOLD Low Q G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Low R DS(on) F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Low Drain-to-Tab Capacitance C Low Package Inductance Weight TO-264 10 g PLUS247 6 g Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 300 V DSS GS D DC-DC Converters V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D Battery Chargers I V = 20V, V = 0V 200 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS Uninterrupted Power Supplies T = 125 C 750 A J AC Motor Drives High Speed Power Switching R V = 10V, I = 0.5 I , Note 1 27 m DS(on) GS D D25 Applications 2020 IXYS CORPORATION, All Rights Reserved DS100481B(1/20)IXFK120N30P3 IXFX120N30P3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 54 90 S fs DS D D25 C 8630 pF iss C V = 0V, V = 25V, f = 1MHz 1406 pF oss GS DS C 20 pF rss R Gate Input Resistance 1.5 Gi t 26 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 1 (External) G t 11 ns f Q 150 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 Q 53 nC gd R 0.11 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = 60A, -di/dt = 100A/ s F Q 2.2 C RM V = 100V, V = 0V R GS I 19.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537