TM TM Polar3 HiPerFET V = 300V IXFK150N30P3 DSS Power MOSFET I = 150A IXFX150N30P3 D25 R 19m DS(on) t 250ns D rr N-Channel Enhancement Mode Avalanche Rated G TO-264 Fast Intrinsic Diode (IXFK) S G D S Symbol Test Conditions Maximum Ratings Tab V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C, R = 1M 300 V DGR J GS PLUS247 V Continuous 20 V GSS (IXFX) V Transient 30 V GSM I T = 25 C 150 A D25 C I T = 25 C, Pulse Width Limited by T 375 A DM C JM G I T = 25 C 75 A A C D Tab S E T = 25 C 4 J AS C P T = 25 C 1300 W D C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg Dynamic dv/dt Rating T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated T 1.6 mm (0.062in.) from Case for 10s 260 C Fast Intrinsic Diode SOLD Low Q G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Low R DS(on) F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Drain-to-Tab Capacitance Weight TO-264 10 g Low Package Inductance PLUS247 6 g Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 3mA 300 V DSS GS D Applications V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D DC-DC Converters I V = 20V, V = 0V 200 nA GSS GS DS Battery Chargers I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS T = 125 C 1 mA Power Supplies J Uninterrupted Power Supplies R V = 10V, I = 0.5 I , Note 1 19 m DS(on) GS D D25 AC Motor Drives High Speed Power Switching Applications 2020 IXYS CORPORATION, All Rights Reserved DS100478B(1/20)IXFK150N30P3 IXFX150N30P3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 65 110 S fs DS D C 12.1 nF iss C V = 0V, V = 25V, f = 1MHz 1910 pF oss GS DS C 40 pF rss R Gate Input Resistance 1.0 Gi t 44 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 74 ns d(off) R = 1 (External) G t 12 ns f Q 197 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D D25 Q 65 nC gd R 0.096 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 150 A S GS I Repetitive, Pulse Width Limited by T 600 A SM JM V I = 100A , V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 75A, -di/dt = 100A/ s F Q 2.9 C RM V = 100V, V = 0V R GS I 23.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537