TM Polar V = 1200V IXFK26N120P DSS TM HiPerFET I = 26A IXFX26N120P D25 Power MOSFET R 500m DS(on) D t 300ns rr N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 1200 V D DSS J S V T = 25 C to 150 C, R = 1M 1200 V DGR J GS Tab V Continuous 30 V GSS V Transient 40 V PLUS247 GSM (IXFX) I T = 25 C 26 A D25 C I T = 25 C, Pulse Width Limited by T 60 A DM C JM I T = 25 C 13 A A C E T = 25 C 1.5 J G AS C D Tab S P T = 25 C 960 W D C dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Diode Dynamic dv/dt Rating M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low R and Q DS(ON) G Weight TO-264 10 g Low Package Inductance PLUS247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 1200 V DSS GS D Applications V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 50 A Discharger Circuits in Lesers Pulsers, DSS DS DSS GS T = 125 C 5 mA Spark Igniters, RF Generators J High Voltage Pulse Power Supplies R V = 10V, I = 0.5 I , Note 1 500 m DS(on) GS D D25 AC and DC Motor Drives High Speed Power Switching Application 2019 IXYS CORPORATION, All Rights Reserved DS99740I(12/19)IXFK26N120P IXFX26N120P Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 13 21 S fs DS D D25 C 14 nF iss C V = 0V, V = 25V, f = 1MHz 725 pF oss GS DS C 50 pF rss R Gate Input Resistance 1.5 Gi t 56 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 76 ns d(off) R = 1 (External) G t 58 ns f Q 255 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 87 nC gs GS DS DSS D D25 Q 98 nC gd R 0.13 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 26 A S GS I Repetitive, Pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 13A, -di/dt = 100A/ s F Q 1.3 C RM V = 100V, V = 0V R GS I 12.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537