Advance Technical Information TM GigaMOS TrenchT2 V = 170V IXFK320N17T2 DSS TM HiperFET I = 320A IXFX320N17T2 D25 R 5.2m Power MOSFET DS(on) t 150ns rr N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 170 V DSS J D (TAB) S V T = 25C to 175C, R = 1M 170 V DGR J GS V Continuous 20 V GSS PLUS247 (IXFX) V Transient 30 V GSM I T = 25C (Chip Capability) 320 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25C, Pulse Width Limited by T 800 A DM C JM I T = 25C 100 A A C E T = 25C5J AS C (TAB) P T = 25C 1670 W D C G = Gate D = Drain dV/dt I I , V V , T 175C 20 V/ns S DM DD DSS J S = Source TAB = Drain T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg z T 1.6mm (0.062 in.) from Case for 10s 300 C International Standard Packages L z T Plastic Body for 10s 260 C High Current Handling Capability SOLD z Fast Intrinsic Diode M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C z Low R DS(on) Weight TO-264 10 g PLUS247 6 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 170 V DSS GS D z V V = V , I = 8mA 2.5 5.0 V Synchronous Recification GS(th) DS GS D z DC-DC Converters I V = 20V, V = 0V 200 nA z GSS GS DS Battery Chargers z Switch-Mode and Resonant-Mode I V = V , V = 0V 50 A DSS DS DSS GS Power Supplies T = 150C 5 mA J z DC Choppers z R V = 10V, I = 60A, Note 1 5.2 m AC Motor Drives DS(on) GS D z Uninterruptible Power Supplies z High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS100188(09/09)IXFK320N17T2 IXFX320N17T2 Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 120 190 S fs DS D C 45 nF iss C V = 0V, V = 25V, f = 1MHz 2890 pF oss GS DS C 410 pF rss R Gate Input Resistance 1.96 Gi t 46 ns d(on) Resistive Switching Times t 170 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 115 ns d(off) Millimeter Inches R = 1 (External) Dim. G Min. Max. Min. Max. t 230 ns f A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 640 nC g(on) A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 Q V = 10V, V = 0.5 V , I = 0.5 I 185 nC gs GS DS DSS D D25 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 Q 175 nC gd c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.09 C/W thJC E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC R 0.15 C/W thCS J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Symbol Test Conditions Characteristic Values T 1.57 1.83 .062 .072 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS 247 (IXFX) Outline I V = 0V 320 A S GS I Repetitive, Pulse Width Limited by T 1280 A SM JM V I = 100A, V = 0V, Note 1 1.25 V SD F GS t 150 ns rr I = 160A, -di/dt = 100A/s F Q 0.53 C RM V = 60V, V = 0V R GS I 9.00 A RM Note 1. Pulse test, t 300s duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 ADVANCE TECHNICAL INFORMATION A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 The product presented herein is under development. The Technical Specifications offered are derived b 1.91 2.13 .075 .084 1 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 2.92 3.12 .115 .123 2considered reflectio of the anticipated result. IXYS reserves the right to change limits, test C 0.61 0.80 .024 .031 conditions, and dimensions without notice. D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537