Q3-Class V = 500V IXFK80N50Q3 DSS TM HiperFET I = 80A IXFX80N50Q3 D25 Power MOSFET R 65m DS(on) t 250ns rr D N-Channel Enhancement Mode G Avalanche Rated TO-264 Fast Intrinsic Rectifier (IXFK) S G D S Symbol Test Conditions Maximum Ratings Tab V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS PLUS247 V Continuous 30 V GSS (IXFX) V Transient 40 V GSM I T = 25 C 80 A D25 C I T = 25 C, Pulse Width Limited by T 240 A DM C JM G D Tab I T = 25 C 80 A S A C E T = 25 C 5 J AS C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J P T = 25 C 1250 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Low Intrinsic Gate Resistance T Maximum Lead Temperature for Soldering 300 C Low Package Inductance L Fast Intrinsic Rectifier T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low R and Q DS(on) G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Advantages Weight TO-264 10 g PLUS247 6 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 500 V DSS GS D DC-DC Converters Battery Chargers V V = V , I = 8mA 3.5 6.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS Temperature and Lighting Controls T = 125 C 2 mA J R V = 10V, I = 0.5 I , Note 1 65 m DS(on) GS D D25 DS100299A(12/19) 2019 IXYS CORPORATION, All Rights Reserved IXFK80N50Q3 IXFX80N50Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 35 55 S fs DS D D25 C 10 nF iss C V = 0V, V = 25V, f = 1MHz 1260 pF oss GS DS C 115 pF rss R Gate Input Resistance 0.15 Gi t 30 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 43 ns d(off) R = 1 (External) G t 15 ns f Q 200 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 77 nC gs GS DS DSS D D25 Q 90 nC gd R 0.10 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 80 A S GS I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 40A, -di/dt = 100A/ s F Q 1.8 C RM V = 100V, V = 0V I R GS 15.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537