TM IXFX 90N30 V = 300 V HiPerFET DSS IXFK 90N30 I =90 A Power MOSFETs D25 R = 33 m DS(on) Single MOSFET Die t 250 ns rr TM Symbol Test Conditions Maximum Ratings PLUS 247 V T = 25C to 150C 300 V DSS J V T = 25C to 150C R = 1 M 300 V DGR J GS (TAB) G V Continuous 20 V GS D V Transient 30 V GSM I T = 25C (MOSFET chip capability) 90 A TO-264 AA (IXFK) D25 C I T = 104C (External lead capability) 75 A D104 C I T = 25C, pulse width limited by T 360 A DM C JM I T = 25C90A AR C G (TAB) D E T = 25C64mJ S AR C E T = 25C3J AS C G = Gate D = Drain dv/dt I I , di/dt 100 A/ s, V V 5 V/ns S DM DD DSS S = Source TAB = Drain T 150C, R = 2 J G P T = 25C 560 W D C T -55 ... +150 C Features J International standard packages T 150 C JM TM Low R HDMOS process T -55 ... +150 C DS (on) stg Rugged polysilicon gate cell structure T 1.6 mm (0.063 in.) from case for 10 s 300 C L Unclamped Inductive Switching (UIS) M Mounting torque TO-264 0.4/6 Nm/lb.in. rated d Low package inductance Weight PLUS 247 6 g - easy to drive and to protect TO-264 10 g Fast intrinsic rectifier Applications DC-DC converters Battery chargers Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. DC choppers V V = 0 V, I = 3mA 300 V DSS GS D AC motor control Temperature and lighting controls V V = V , I = 8mA 2.0 4.0 V GS(th) DS GS D I V = 20 V, V = 0 100 nA GSS GS DS Advantages I V = V T = 25C 100 A TM DSS DS DSS J PLUS 247 package for clip or spring V = 0 V T = 125C 2 mA GS J mounting R V = 10 V, I = 0.5 I 33 m Space savings DS(on) GS D D25 Note 1 High power density 98537A (12/01) 2001 IXYS All rights reservedIXFK 90N30 IXFX 90N30 Symbol Test Conditions Characteristic Values TM PLUS 247 Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I Note 1 40 70 S fs DS D D25 C 10000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1800 pF oss GS DS C 700 pF rss t 42 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 55 ns r GS DS DSS D D25 t R = 1 (External), 100 ns d(off) G Terminals: 1 - Gate 2 - Drain (Collector) t 40 ns f 3 - Source (Emitter) 4 - Drain (Collector) Q 360 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 0.5 I 60 nC gs GS DS DSS D D25 A 4.83 5.21 .190 .205 Q 180 nC A 2.29 2.54 .090 .100 gd 1 A 1.91 2.16 .075 .085 2 R 0.22 K/W b 1.14 1.40 .045 .055 thJC b 1.91 2.13 .075 .084 1 R 0.15 K/W thCK b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E15.75 16.13 .620 .635 e 5.45 BSC .215 BSC Source-Drain Diode Characteristic Values L 19.81 20.32 .780 .800 (T = 25C, unless otherwise specified) J L1 3.81 4.32 .150 .170 Symbol Test Conditions min. typ. max. Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 I V = 0 V 90 A S GS TO-264 AA Outline I Repetitive 360 A SM pulse width limited by T JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 250 ns rr I = 50A,-di/dt = 100 A/ s, V = 100 V Q 1.4 C F R RM I 10 A RM Millimeter Inches Dim. Min. Max. Min. Max. Note: 1. Pulse test, t 300 s, duty cycle d 2 % A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025