The IXKR40N60C is an insulated gate bipolar transistor (IGBT) from IXYS, an American company that manufactures power semiconductors and ICs. This device is rated for a maximum drain-source voltage of 600 V, a continuous collector current of 40 A, and a pulsed Collector current of 80 A. It is typically used in inverters, converters, choppers, motor control, and switching applications. It features a fast switching speed, low on-state resistance, and rugged operation.