Depletion Mode V = 1000V IXTY08N100D2 DSX MOSFET I > 800mA IXTA08N100D2 D(on) R 21 IXTP08N100D2 DS(on) N-Channel D TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 1000 V S DSX J D (Tab) V Continuous 20 V GSX V Transient 30 V GSM TO-220AB (IXTP) P T = 25 C60W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg G T Maximum Lead Temperature for Soldering 300 C L D D (Tab) S T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d G = Gate D = Drain S = Source Tab = Drain Weight TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Symbol Test Conditions Characteristic Values Flammability Classification (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = - 5V, I = 25A 1000 V Advantages DSX GS D V V = 25V, I = 25 A - 2.0 - 4.0 V GS(off) DS D Easy to Mount Space Savings I V = 20V, V = 0V 50 nA GSX GS DS High Power Density I V = V , V = - 5V 1 A DSX(off) DS DSX GS T = 125C 15A Applications J R V = 0V, I = 400mA, Note 1 21 DS(on) GS D Audio Amplifiers Start-up Circuits I V = 0V, V = 50V, Note 1 800 mA D(on) GS DS Protection Circuits Ramp Generators Current Regulators Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100182C(9/17)IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 400mA, Note 1 330 560 mS fs DS D C 325 pF iss C V = -10V, V = 25V, f = 1MHz 24 pF oss GS DS C 6.5 pF rss t 28 ns d(on) Resistive Switching Times t 57 ns r V = 5V, V = 500V, I = 400mA GS DS D t 34 ns d(off) R = 10 (External) G t 48 ns f Q 14.6 nC g(on) Q V = 5V, V = 500V, I = 400mA 1.2 nC gs GS DS D Q 8.3 nC gd R 2.08 C/W thJC R TO-220 0.50 C/W thCS Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 800V, I = 45mA, T = 75 C, Tp = 5s 36 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 800mA, V = -10V, Note 1 0.8 1.3 V SD F GS t 1.03 s rr I = 800mA, -di/dt = 100A/ s F I 7.40 A RM V = 100V, V = -10V R GS Q 3.80 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537