Advance Technical Information X4-Class V = 150V IXTA130N15X4 DSS TM Power MOSFET I = 130A IXTA130N15X4-7 D25 R 8.0m DS(on) N-Channel Enhancement Mode TO-263 AA Avalanche Rated G S D (Tab) G = Gate D = Drain Symbol Test Conditions Maximum Ratings S = Source Tab = Drain V T = 25 C to 150 C 150 V DSS J V T = 25 C to 150 C, R = 1M 150 V DGR J GS TO-263 (7-Leads) V Continuous 20 V GSS V Transient 30 V GSM 1 I T = 25 C 130 A D25 C 7 I T = 25 C, Pulse Width Limited by T 240 A DM C JM D (Tab) I T = 25 C65 A A C Pins: 1 - Gate E T = 25 C 800 mJ AS C 2, 3, 5 , 6 , 7 - Source dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J 4 (Tab) - Drain P T = 25 C 400 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low R and Q DS(ON) G F Mounting Force 10.65 / 2.2..14.6 N/lb Avalanche Rated C Low Package Inductance Weight TO-263 2.5 g TO-263 (7Leads) 3.0 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 5 A DC-DC Converters DSS DS DSS GS T = 125C 200 A PFC Circuits J AC and DC Motor Drives R V = 10V, I = 0.5 I , Notes 1&2 7.0 8.0 m DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved. DS100894A(4/18) IXTA130N15X4 IXTA130N15X4-7 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 70 120 S fs DS D R Gate Input Resistance 3.4 Gi C 4770 pF iss C V = 0V, V = 25V, f = 1MHz 710 pF oss GS DS C 3.5 pF rss Effective Output Capacitance C 560 pF V = 0V o(er) Energy related GS V = 0.8 V C 1850 pF DS DSS o(tr) Time related t 20 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 100 ns d(off) R = 5 (External) G t 10 ns f Q 87 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 24 nC gs GS DS DSS D D25 Q 23 nC gd R 0.31 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 130 A S GS I Repetitive, pulse Width Limited by T 520 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 93 ns rr I = 65A, -di/dt = 100A/ s F Q 310 nC RM V = 75V R I 6.7 A RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be 5mm DS(on) or less from the package body. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537