Preliminary Technical Information TM TrenchT4 V = 40V IXTA340N04T4 DSS I = 340A Power MOSFET IXTA340N04T4-7 D25 R 1.7m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 AA Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C40 V DSS J G = Gate D = Drain V T = 25 C to 175 C, R = 1M 40 V S = Source Tab = Drain DGR J GS V Transient 15 V GSM TO-263 (7-Leads) I T = 25 C 340 A D25 C I Lead Current Limit, RMS 160 A LRMS I T = 25 C, Pulse Width Limited by T 750 A DM C JM 1 I T = 25 C 170 A A C 7 E T = 25 C 1.2 J AS C (Tab) I T = 25 C 340 A A C Pins: 1 - Gate E T = 25 C 500 mJ AS C 2, 3, 5 , 6 , 7 - Source 4 (Tab) - Drain P T = 25 C 480 W D C T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD International Standard Packages F Mounting Force 10..65 / 2.2..14.6 N/lb C 175C Operating Temperature High Current Handling Capability Weight TO-263 2.5 g TO-263 (7Leads) 3.0 g Avalanche Rated Fast Intrinsic Rectifier Low R DS(on) Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = 0V, I = 250 A 40 V DSS GS D Easy to Mount V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Space Savings High Power Density I V = 15V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS Applications T = 150C 750 A J R V = 10V, I = 100A, Notes 1, 2 1.7 m DS(on) GS D DC-DC Converters & Off-Line UPS Primary-Side Switch High Current Switching Applications 2016 IXYS CORPORATION, All Rights Reserved DS100700B(03/16) IXTA340N04T4 IXTA340N04T4-7 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 115 195 S fs DS D C 13 nF iss C V = 0V, V = 25V, f = 1MHz 1850 pF oss GS DS C 1226 pF rss R Gate Input Resistance 1.1 Gi t 23 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 113 ns d(off) R = 3 (External) G t 40 ns f Q 256 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 64 nC gs GS DS DSS D D25 Q 86 nC gd R 0.31C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 340 A S GS I Repetitive, Pulse Width Limited by T 1360 A JM SM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t I = 150A, V 43 ns = 0V, rr F GS -di/dt = 100A/ s, I 10 A RM V = 30V R Q 210 nC RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be 5mm DS(on) or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537