IXTA60N20X4 V = 200V X4-Class DSS I = 60A Power MOSFET D25 R 21.0m DS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-263 (IXTA) S G S D (Tab) Symbol Test Conditions Maximum Ratings G = Gate D = Drain S = Source Tab = Drain V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C, R = 1M 200 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM I T = 25 C 60 A D25 C I T = 25 C, Pulse Width Limited by T 106 A DM C JM Features I T = 25 C 30 A A C E T = 25 C 350 mJ AS C International Standard Package dv/dt I I , V V , T 150 C 50 V/ns Low R and Q S DM DD DSS J DS(ON) G Avalanche Rated P T = 25 C 250 W D C Low Package Inductance T -55 ... +175 C J T 175 C JM T -55 ... +175 C Advantages stg T Plastic Body for 10s 260 C SOLD High Power Density Easy to Mount F Mounting Force 10..65 / 2.2..14.6 N/lb C Space Savings Weight 2.5 g Applications Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits AC and DC Motor Drives BV V = 0V, I = 250A 200 V DSS GS D Robotics and Servo Controls V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 150 C 300 A J R V = 10V, I = 0.5 I , Note 1 17.6 21.0 m DS(on) GS D D25 2021 Littelfuse, Inc. DS101043A(10/21)IXTA60N20X4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 34 56 S fs DS D D25 R Gate Input Resistance 7.45 Gi C 2450 pF iss C V = 0V, V = 25V, f = 1MHz 406 pF oss GS DS C 0.95 pF rss Effective Output Capacitance C 240 pF o(er) Energy related V = 0V GS C 880 pF V = 0.8 V o(tr) Time related DS DSS t 13 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 52 ns d(off) R = 5 (External) G t 10 ns f Q 33 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 9 nC gs GS DS DSS D D25 Q 11 nC gd R 0.60 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 60 A S GS I Repetitive, Pulse Width Limited by T 240 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 107 ns rr I = 30A, -di/dt = 200A/s F Q 920 nC RM V = 100V R I 17 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2 % Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537