TM IXTA 8N50P V = 500 V PolarHV DSS IXTP 8N50P I = 8 A Power MOSFET D25 R 0.8 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C R = 1 M 500 V DGR J GS G V Continuous 30 V GS S V Transient 40 V GSM (TAB) I T = 25C8A D25 C I T = 25 C, pulse width limited by T 14 A DM C JM TO-220 (IXTP) I T = 25C8A AR C E T = 25C20mJ AR C E T = 25 C 400 mJ AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS (TAB) G D T 150 C, R = 18 S J G P T = 25 C 150 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source TAB = Drain T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-220 4 g TO-263 3 g l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25 C unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 500 V DSS GS D Advantages V V = V , I = 100A 3.0 5.5 V GS(th) DS GS D l Easy to mount l I V = 30 V , V = 0 100 nA Space savings GSS GS DC DS l High power density I V = V 5 A DSS DS DSS V = 0 V T = 125C50 A GS J R V = 10 V, I = 0.5 I 0.8 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99321E(03/06) 2006 IXYS All rights reserved OBSOLETE IXTA 8N50P IXTP 8N50P Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline (T = 25 C unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 5 8 S fs DS D D25 C 1050 pF iss C V = 0 V, V = 25 V, f = 1 MHz 120 pF oss GS DS C 12 pF rss t 22 ns d(on) t V = 10 V, V = 0.5 V , I = I 28 ns r GS DS DSS D D25 t R = 18 (External) 65 ns d(off) G t 23 ns f Q 20 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 7nC gs GS DS DSS D D25 Q 7nC gd R 0.83 C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. TO-220 (IXTP) Outline I V = 0 V 8 A S GS I Repetitive 14 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 8 A, V =0V, V =100V 400 ns rr F GS R -di/dt = 100 A/s Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 OBSOLETE