IXTH120P065T IXYS

Name: IXTH120P065T
Brand: IXYS
SKU: IXTH120P065T_IXYS
Availability: InStock
Rating: 5 (11 reviews)

IXTH120P065T electronic component of IXYS

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTH120P065T MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH120P065T MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IXTH120P065T
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET -120 Amps -65V 0.01 Rds
Datasheet:	IXTH120P065T Datasheet (PDF)

Price (USD)

1: USD 9.06 ea
Line Total: USD 9.06

Availability : 2350

Ship by Wed. 08 Oct to Fri. 10 Oct

Qty Unit Price
1 $ 9.06
10 $ 5.038
120 $ 4.642
510 $ 4.642

IXTH120P065T More Buying Options & Price Grid(s)

Please wait...

Availability

Price (USD)

Buy Price

Quantity

Availability 2350

Ship by Wed. 08 Oct to Fri. 10 Oct

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 9.06
10 $ 5.038
120 $ 4.642
510 $ 4.642

Availability 68

Ship by Wed. 08 Oct to Fri. 10 Oct

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 11.06
3 $ 8.106
7 $ 7.672
30 $ 7.378

Specifications

Manufacturer

IXYS IXYS

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

120 A 120 A

Vds - Drain-Source Breakdown Voltage

65 V 65 V

Rds On - Drain-Source Resistance

10 mOhms 10 mOhms

Transistor Polarity

P - Channel P - Channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

298 W 298 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 247 - 3 TO - 247 - 3

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

15 V 15 V

Qg - Gate Charge

58 nC 58 nC

Configuration

Single Single

Series

Ixth120p065 Ixth120p065

Transistor Type

1 P - Channel 1 P - Channel

Brand

Ixys Ixys

Forward Transconductance - Min

75 S 75 S

Fall Time

21 ns 21 ns

Product Type

Mosfet Mosfet

Rise Time

28 ns 28 ns

Factory Pack Quantity :

30 30

Subcategory

Mosfets Mosfets

Notes:- Show Stocked Products With Similar Attributes.

IXTH120P065T Alternative Parts

We are delighted to provide the IXTH120P065T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH120P065T and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IXTH120P065T is a power metal–oxide–semiconductor field-effect transistor (MOSFET) designed for use in industrial, power, and automotive applications. It has a drain-source voltage of 65V, a current rating of 120 Amps, and an on-resistance Rdson of 0.01O. Produced by the IXYS Corporation, this MOSFET is suitable for high power, high speed, and high efficiency switching. It features a low RDS(ON), high ruggedness, high dV/dt, fast switching, and low gate-charge. Its construction and packaging makes it suitable for through-hole, surface-mount, and hybrid applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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