IXTH12N150 IXYS

IXTH12N150 electronic component of IXYS
IXTH12N150 IXYS
IXTH12N150 MOSFETs
IXTH12N150  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTH12N150 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH12N150 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTH12N150
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET >1200V High Voltage Power MOSFET
Datasheet: IXTH12N150 Datasheet (PDF)
Price (USD)
1: USD 21.408 ea
Line Total: USD 21.41 
Availability : 190
  
Ship by Fri. 10 Oct to Tue. 14 Oct
QtyUnit Price
1$ 21.408
10$ 13.86
120$ 12.1
510$ 10.604

Availability 190
Ship by Fri. 10 Oct to Tue. 14 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 21.408
10$ 13.86
120$ 12.1
510$ 10.604

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Height
Length
Series
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXTH12N150 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH12N150 and other electronic components in the MOSFETs category and beyond.

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High Voltage V = 1500V IXTT12N150 DSS I = 12A Power MOSFET IXTH12N150 D25 R 2.2 DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1500 V DSS J D (Tab) V T = 25 C to 150 C, R = 1M 1500 V DGR J GS V Continuous 30 V GSS TO-247 (IXTH) V Transient 40 V GSM I T = 25 C12A D25 C I T = 25 C, Pulse Width Limited by T 40 A DM C JM I T = 25C 6 A G A C D D (Tab) E T = 25C 750 mJ S AS C dv/dt I I , V V ,T 150 C 5 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C 890 W D C S = Source Tab = Drain T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) From Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque 1.13 / 10 Nm/lb.in. d International Standard Packages Weight TO-268 4.0 g Molding Epoxies Weet UL 94 V-0 TO-247 6.0 g Flammability Classification Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Advantages J BV V = 0V, I = 1mA 1500 V DSS GS D Easy to Mount Space Savings V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D High Power Density I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS Applications T = 125C 500A J High Voltage Power Supplies R V = 10V, I = 0.5 I , Note 1 2.2 DS(on) GS D D25 Capacitor Discharge Pulse Circuits 2015 IXYS CORPORATION, All Rights Reserved DS100425C(6/15)IXTT12N150 IXTH12N150 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 8 13 S fs DS D D25 C 3720 pF iss C V = 0V, V = 25V, f = 1MHz 240 pF oss GS DS C 80 pF rss t 26 ns d(on) Resistive Switching Times t 16 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 53 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 2 (External) G 3 - Source t 14 ns f Q 106 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 50 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A TO-247 Outline SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 1.2 s rr I = 6A, -di/dt = 100A/ s F I 24.5 A P RM 1 2 3 V = 100V, V = 0V R GS Q 14.8 C RM e Note 1. Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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