TM PolarP V = - 600V IXTH16P60P DSS I = - 16A Power MOSFETs IXTT16P60P D25 R 720m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 600 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M - 600 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C - 16 A G D25 C D D (Tab) I T = 25C, Pulse Width Limited by T - 48 A S DM C JM I T = 25C - 16 A A C G = Gate D = Drain E T = 25C 2.5 J AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 460 W D C T - 55 ... +150 C J T 150 C Features JM T - 55 ... +150 C stg z International Standard Packages T 1.6mm (0.062 in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10s 260 C SOLD z TM Rugged PolarP Process M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d z Fast intrinsic Diode z Weight TO-268 4 g Low Package Inductance TO-247 6 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A - 600 V DSS GS D Applications V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z High-Side Switches I V = 20V, V = 0V 100 nA GSS GS DS z Push-Pull Amplifiers z I V = V , V = 0V - 25 A DSS DS DSS GS DC Choppers z T = 125C - 200 A J Current Regulators z Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 720 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99988B(01/13) IXTH16P60P IXTT16P60P Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 11 18 S fs DS D D25 C 5120 pF iss P C V = 0V, V = - 25V, f = 1MHz 445 pF 1 2 3 oss GS DS C 60 pF rss t 29 ns d(on) Resistive Switching Times t 25 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) e R = 3 (External) G t 38 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 92 nC g(on) Dim. Millimeter Inches Q V = -10V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 23 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.27 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Source-Drain Diode E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Symbol Test Conditions Characteristic Values L 19.81 20.32 .780 .800 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. L1 4.50 .177 J P 3.55 3.65 .140 .144 I V = 0V - 16 A Q 5.89 6.40 0.232 0.252 S GS R 4.32 5.49 .170 .216 I Repetitive, Pulse Width Limited by T - 64 A SM JM S 6.15 BSC 242 BSC V I = - 8A, V = 0V, Note 1 - 2.8 V SD F GS TO-268 Outline t 440 ns I = - 8A, -di/dt = -150A/s rr F Q 7.4 C RM V = -100V, V = 0V R GS I - 33.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537