Preliminary Technical Information X-Class V = 650V IXTH64N65X DSS Power MOSFET I = 64A D25 R 51m DS(on) N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V G GSS D Tab V Transient 40 V S GSM I T = 25 C64A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 128 A DM C JM S = Source Tab = Drain P T = 25 C 890 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque 1.13/10 Nm/lb.in d International Standard Package Low R and Q Weight 6 g DS(ON) G Low Package Inductance Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS PFC Circuits T = 125C 100 A J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 51 m Robotics and Servo Controls DS(on) GS D D25 2015 IXYS CORPORATION, All Rights Reserved DS100618C(6/15) IXTH64N65X Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J D g V = 10V, I = 0.5 I , Note 1 30 52 S A fs DS D D25 A B E A2 R Gate Input Resistance 1.5 Q Gi S D2 R D1 C 5500 pF D iss P1 4 C V = 0V, V = 25V, f = 1MHz 4090 pF oss GS DS 1 2 3 L1 C 80 pF rss C E1 L Effective Output Capacitance C 257 pF o(er) Energy related V = 0V GS A1 b C 834 pF V = 0.8 V C b2 o(tr) Time related DS DSS 1 - Gate b4 e 2,4 - Drain 3 - Source t 22 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) R = 1 (External) G t 28 ns f Q 143 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 29 nC gs GS DS DSS D D25 Q 70 nC gd R 0.14 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 64 A S GS I Repetitive, pulse Width Limited by T 256 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 450 ns rr I = 32A, -di/dt = 100A/ s F Q 10 C RM V = 100V R I 44 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537