IXTH6N120 IXYS

IXTH6N120 electronic component of IXYS
IXTH6N120 IXYS
IXTH6N120 MOSFETs
IXTH6N120  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTH6N120 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH6N120 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTH6N120
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 6 Amps 1200V 2.700 Rds
Datasheet: IXTH6N120 Datasheet (PDF)
Price (USD)
1: USD 12.324 ea
Line Total: USD 12.32 
Availability - 188
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 12.324
10$ 9.779
120$ 9.438

Availability 188
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 12.324
10$ 9.779
120$ 9.438

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTH6N120 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH6N120 and other electronic components in the MOSFETs category and beyond.

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IXTH 6N120 V = 1200 V High Voltage DSS IXTT 6N120 I = 6 A D25 Power MOSFET R = 2.6 DS(on) N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V DSS J V T = 25C to 150C R = 1 M 1200 V DGR J GS V Continuous 20 V (TAB) GS V Transient 30 V GSM I T = 25C6A D25 C I T = 25C, pulse width limited by T 24 A TO-268 (IXTT) Case Style DM C JM I T = 25C6A AR C E T = 25C25mJ AR C G E T = 25C 500 mJ (TAB) AS C S dv/dt I I , di/dt 100 A/s, V V , 5 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 J G S = Source TAB = Drain P T = 25C 300 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z T 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages L z TM Low R HDMOS process M Mounting torque 1.13/10 Nm/lb.in. DS (on) d z Rugged polysilicon gate cell structure Weight TO-247 AD 6 g z Unclamped Inductive Switching (UIS) TO-268 4 g rated z Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J z Easy to mount V V = 0 V, I = 250 A 1200 V z DSS GS D Space savings z V V = V , I = 250A 2.5 5.0 V High power density GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V T = 25C25 A DSS DS DSS J V = 0 V T = 125C 500 A GS J R V = 10 V, I = 0.5 I 2.6 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99024B(01/04) 2004 IXYS All rights reservedIXTH 6N120 IXTT 6N120 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 3 5 S fs DS D D25 1 2 3 C 1950 pF iss C V = 0 V, V = 25 V, f = 1 MHz 175 pF oss GS DS C 60 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 33 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 4.7 (External) 42 ns d(off) G 3 - Source Tab - Drain t 18 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 56 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 13 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 25 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R 0.42 K/W 2 thJC C .4 .8 .016 .031 R (TO-247) 0.21 K/W thCK D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 6 A S GS I Repetitive 24 A SM TO-268 Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % ns T I = 6A 850 rr F -di/dt = 100 A/s Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS
IXYS CORP
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
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