TM V I R MegaMOS FET DSS D25 DS(on) IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) V T = 25C to 150C 100 V DSS J V T = 25C to 150C R = 1 M 100 V DGR J GS TO-204 AE (IXTM) V Continuous 20 V GS V Transient 30 V GSM I T = 25C 67N10 67 A D25 C 75N10 75 A I T = 25C, pulse width limited by T 67N10 268 A DM C JM 75N10 300 A G D TO-268 (IXTT) P T = 25C 300 W D C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C S stg D (TAB) G = Gate, D = Drain, M Mounting torque 1.13/10 Nm/lb.in. S = Source, TAB = Drain d Features Weight TO-204 18 g TO-247 6 g z International standard packages TO-268 5 g z TM Low R HDMOS process DS (on) z Rugged polysilicon gate cell structure Maximum lead temperature for soldering 10 C z Unclamped Inductive Switching (UIS) 1.6 mm (0.062 in.) from case for 10 s rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values z (T = 25C, unless otherwise specified) DC-DC converters J z min. typ. max. Synchronous rectification z Battery chargers z Switched-mode and resonant-mode V V = 0 V, I = 250 A 100 V DSS GS D power supplies z V V = V , I = 4 mA 2.0 4 V DC choppers GS(th) DS GS D z AC motor control z I V = 20 V , V = 0 100 nA Temperature and lighting controls GSS GS DC DS z Low voltage relays I V = 0.8 V T = 25C 250 A DSS DS DSS J V = 0 V T = 125C1mA GS J Advantages R V = 10 V, I = 0.5 I 67N10 0.025 DS(on) GS D D25 z Easy to mount with 1 screw (TO-247) 75N10 0.020 (isolated mounting screw hole) Pulse test, t 300 s, duty cycle d 2 % z Space savings z High power density IXYS reserves the right to change limits, test conditions, and dimensions. DS91533F(9/03) 2003 IXYS All rights reserved 1IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Symbol Test Conditions Characteristic Values TO-247 AD (IXTH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = I , pulse test 25 30 S fs DS D D25 C 4500 pF 1 2 3 iss C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 550 pF rss t 40 60 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 60 110 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 2 , (External) 100 140 ns d(off) G 3 - Source Tab - Drain t 30 60 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 180 260 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 30 70 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 90 160 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.42 K/W b 2.87 3.12 .113 .123 2 thJC C .4 .8 .016 .031 R (TO-204, TO-247) 0.25 K/W thCK D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 67N10 67 A S GS 75N10 75 A TO-204AE (IXTM) Outline I Repetitive 67N10 268 A SM pulse width limited by T 75N10 300 A JM V I = I , V = 0 V, 1.75 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , -di/dt = 100 A/s, V = 100 V 200 ns rr F S R TO-268 (IXTT) Outline Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 6.4 11.4 .250 .450 A1 3.42 .135 b .97 1.09 .038 .043 D 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 L 7.93 .312 p 3.84 4.19 .151 .165 p1 3.84 4.19 .151 .165 q 30.15 BSC 1.187 BSC R 13.33 .525 R1 4.77 .188 s 16.64 17.14 .655 .675 IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343