IXTH96N20P IXYS

IXTH96N20P electronic component of IXYS
IXTH96N20P IXYS
IXTH96N20P MOSFETs
IXTH96N20P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTH96N20P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH96N20P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTH96N20P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 96 Amps 200V 0.024 Rds
Datasheet: IXTH96N20P Datasheet (PDF)
Price (USD)
1: USD 10.116 ea
Line Total: USD 10.12 
Availability - 248
  
Ship by Tue. 29 Jul to Thu. 31 Jul
QtyUnit Price
1$ 10.116
10$ 5.863
120$ 5.687
510$ 5.456

Availability 248
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.116
10$ 5.863
120$ 5.687
510$ 5.456

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTH96N20P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH96N20P and other electronic components in the MOSFETs category and beyond.

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TM IXTH 96N20P V = 200 V DSS PolarHT IXTQ 96N20P I = 96 A D25 Power MOSFET IXTT 96N20P R 24 m DS(on) N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C 200 V S DSS J (TAB) V T = 25 C to 150 C R = 1 M 200 V DGR J GS V Continous 20 V TO-3P (IXTQ) GSS V Transient 30 V GSM I T = 25C96A D25 C I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 225 A DM C JM G D (TAB) I T = 25C60A AR C S E T = 25C50mJ AR C E T = 25 C 1.5 J TO-268 (IXTT) AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G G P T = 25 C 600 W S D C D (TAB) T -55 ... +175 C J T 175 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source TAB = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 C L Features T Plastic body for 10 s 260 C SOLD l International standard packages M Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in. d l Unclamped Inductive Switching (UIS) Weight TO-3P 5.5 g rated TO-247 6.0 g l Low package inductance TO-268 5.0 g - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Easy to mount BV V = 0 V, I = 250 A 200 V l DSS GS D Space savings l High power density V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150 C 250 A GS J R V = 10 V, I = 0.5 I 24 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99117E(10/05) 2006 IXYS All rights reservedIXTH 96N20P IXTQ 96N20P IXTT 96N20P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 52 S fs DS D D25 C 4800 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1020 pF oss GS DS C 270 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I = I 30 ns r GS DS DSS D D25 t R = 4 (External) 75 ns d(off) G t 30 ns f Q 145 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 80 nC gd R 0.25 C/W thJC R (TO-3P, TO-247) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 96 A S GS TO-268 (IXTT) Outline I Repetitive 240 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 160 ns rr F Q V = 100 V, V = 0 V 3.0 C RM R GS TO-247 (IXTH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 1 2 3 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Terminals: 1 - Gate 2 - Drain Q 5.89 6.40 0.232 0.252 3 - Source Tab - Drain R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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