IXTA102N15T Trench Gate V = 150V DSS IXTH102N15T Power MOSFETs I = 102A D25 IXTP102N15T R 18m DS(on) N-Channel Enhancement Mode IXTQ102N15T Avalanche Rated TO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP) TO-3P (IXTQ) G S G G D (TAB) (TAB) G (TAB) S D (TAB) D S S Symbol Test Conditions Maximum Ratings V T = 25C to 175C 150 V DSS J G = Gate D = Drain V T = 25C to 175C R = 1M 150 V DGR J GS S = Source TAB = Drain V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 102 A D25 C I Lead Current Limit, RMS 75 A LRMS Features I T = 25C, Pulse Width Limited by T 300 A DM C JM I T = 25C51A z A C International Standard Packages E T = 25C 750 mJ z AS C Avalanche Rated dV/dt I I , V V ,T 175C 10 V/ns S DM DD DSS J Advantages P T = 25C 455 W D C z Easy to Mount T -55 ... +175 C J z Space Savings T 175 C JM z T -55 ... +175 C High Power Density stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Applications T Plastic Body for 10 seconds 260 C SOLD z M Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10 Nmlb.in. DC-DC Converters d z Battery Chargers F Mounting Force (TO-263) 10..65/2.2..14.6 N/lb. C z Switched-Mode and Resonant-Mode Weight TO-263 2.5 g Power Supplies TO-220 3.0 g z DC Choppers TO-3P 5.5 g z AC Motor Drives TO-247 6.0 g z Uninterruptible Power Supplies z High Speed Power Switching Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D V V = V , I = 1mA 2.5 5.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 150C 250 A J R V = 10V, I = 0.5 I , Note 1 18 m DS(on) GS D D25 2009 IXYS CORPORATION, All Rights Reserved DS99661C(04/09)IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 50 80 S fs DS D D25 C 5220 pF iss C V = 0V, V = 25V, f = 1MHz 685 pF oss GS DS C 95 pF rss t 20 ns d(on) Resistive Switching Times t 14 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 25 ns d(off) R = 3.3 (External) G t 22 ns f Q 87 nC g(on) Q V = 10V, V = 0.5 V , I = 25A 23 nC gs GS DS DSS D Q 31 nC gd R 0.33 C/W thJC R (TO-220) 0.50 C/W thCH (TO-3P & TO-247) 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 102 A S GS I Repetitive, Pulse Width Limited by T 400 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 97 ns I = 51A, -di/dt = 100A/s rr F I 8.4 A RM V = 75V, V = 0V R GS Q 409 nC RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537